Abstract
Excellent lasing performance is demonstrated for a 1.83-μm InGaAlAs-InP Vertical-Cavity Surface-Emitting Laser (VCSEL) utilizing the Buried Tunnel Junction technology. Threshold currents as low as 190 μA at 20°C and operating temperatures as high as 90°C have been measured. These values are the best ones reported so far for long-wavelength VCSELs.
| Original language | English |
|---|---|
| Pages (from-to) | 1435-1437 |
| Number of pages | 3 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 12 |
| Issue number | 11 |
| DOIs | |
| State | Published - Nov 2000 |
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