80 °C continuous-wave operation of 2.01-μm wavelength InGaAlAs-InP vertical-cavity surface-emitting lasers

C. Lauer; M. Ortsiefer; R. Shau; J. Rosskopf; G. Böhm; E. Rönneberg; F. Köhler; M. C. Amann

doi:10.1109/LPT.2004.833929

80 °C continuous-wave operation of 2.01-μm wavelength InGaAlAs-InP vertical-cavity surface-emitting lasers

C. Lauer, M. Ortsiefer, R. Shau, J. Rosskopf, G. Böhm, E. Rönneberg, F. Köhler, M. C. Amann

Chair of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Electrically pumped buried tunnel junction InGaAlAs-InP vertical-cavity surface-emitting lasers (VCSELs) with self-adjusted lateral current and optical confinement and record emission wavelengths beyond 2 μm are presented. Front and back side mirrors are realized using 31.5 epitaxial layer pairs of alternating InGaAs-InAlAs and a dielectric 2.5 pair CaF₂-a-Si layer stack. The devices show single-mode continuous-wave operation up to heat sink temperatures over 80 °C. The maximum output power at 20 °C reaches 0.43 mW, threshold current and voltage are as low as 0.66 mA and 0.73 V, respectively. To reach the long emission wavelength, we use an optimized active region comprising heavily strained quantum wells. High-resolution X-ray diffraction and photoluminescence measurements reveal excellent material quality without relaxation in the quantum wells.

Original language	English
Pages (from-to)	2209-2211
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	16
Issue number	10
DOIs	https://doi.org/10.1109/LPT.2004.833929
State	Published - Oct 2004

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title = "80 °C continuous-wave operation of 2.01-μm wavelength InGaAlAs-InP vertical-cavity surface-emitting lasers",

abstract = "Electrically pumped buried tunnel junction InGaAlAs-InP vertical-cavity surface-emitting lasers (VCSELs) with self-adjusted lateral current and optical confinement and record emission wavelengths beyond 2 μm are presented. Front and back side mirrors are realized using 31.5 epitaxial layer pairs of alternating InGaAs-InAlAs and a dielectric 2.5 pair CaF2-a-Si layer stack. The devices show single-mode continuous-wave operation up to heat sink temperatures over 80 °C. The maximum output power at 20 °C reaches 0.43 mW, threshold current and voltage are as low as 0.66 mA and 0.73 V, respectively. To reach the long emission wavelength, we use an optimized active region comprising heavily strained quantum wells. High-resolution X-ray diffraction and photoluminescence measurements reveal excellent material quality without relaxation in the quantum wells.",

author = "C. Lauer and M. Ortsiefer and R. Shau and J. Rosskopf and G. B{\"o}hm and E. R{\"o}nneberg and F. K{\"o}hler and Amann, {M. C.}",

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doi = "10.1109/LPT.2004.833929",

language = "English",

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journal = "IEEE Photonics Technology Letters",

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T1 - 80 °C continuous-wave operation of 2.01-μm wavelength InGaAlAs-InP vertical-cavity surface-emitting lasers

AU - Lauer, C.

AU - Ortsiefer, M.

AU - Shau, R.

AU - Rosskopf, J.

AU - Böhm, G.

AU - Rönneberg, E.

AU - Köhler, F.

AU - Amann, M. C.

PY - 2004/10

Y1 - 2004/10

N2 - Electrically pumped buried tunnel junction InGaAlAs-InP vertical-cavity surface-emitting lasers (VCSELs) with self-adjusted lateral current and optical confinement and record emission wavelengths beyond 2 μm are presented. Front and back side mirrors are realized using 31.5 epitaxial layer pairs of alternating InGaAs-InAlAs and a dielectric 2.5 pair CaF2-a-Si layer stack. The devices show single-mode continuous-wave operation up to heat sink temperatures over 80 °C. The maximum output power at 20 °C reaches 0.43 mW, threshold current and voltage are as low as 0.66 mA and 0.73 V, respectively. To reach the long emission wavelength, we use an optimized active region comprising heavily strained quantum wells. High-resolution X-ray diffraction and photoluminescence measurements reveal excellent material quality without relaxation in the quantum wells.

AB - Electrically pumped buried tunnel junction InGaAlAs-InP vertical-cavity surface-emitting lasers (VCSELs) with self-adjusted lateral current and optical confinement and record emission wavelengths beyond 2 μm are presented. Front and back side mirrors are realized using 31.5 epitaxial layer pairs of alternating InGaAs-InAlAs and a dielectric 2.5 pair CaF2-a-Si layer stack. The devices show single-mode continuous-wave operation up to heat sink temperatures over 80 °C. The maximum output power at 20 °C reaches 0.43 mW, threshold current and voltage are as low as 0.66 mA and 0.73 V, respectively. To reach the long emission wavelength, we use an optimized active region comprising heavily strained quantum wells. High-resolution X-ray diffraction and photoluminescence measurements reveal excellent material quality without relaxation in the quantum wells.

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U2 - 10.1109/LPT.2004.833929

DO - 10.1109/LPT.2004.833929

M3 - Article

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SN - 1041-1135

VL - 16

SP - 2209

EP - 2211

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 10

ER -

80 °C continuous-wave operation of 2.01-μm wavelength InGaAlAs-InP vertical-cavity surface-emitting lasers

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