Abstract
Planar oscillators on highly insulating silicon substrate with a disc resonator were fabricated. The active element was an IMPATT diode made from SI MBE material. A maximum CW output power of 200 mW with an efficiency of 4.5% at 73 GHz has been obtained.
| Original language | English |
|---|---|
| Pages (from-to) | 977-978 |
| Number of pages | 2 |
| Journal | Electronics Letters |
| Volume | 24 |
| Issue number | 15 |
| DOIs | |
| State | Published - 1988 |
Keywords
- IMPATTS
- Microwave oscillators
- Oscillators
- Semiconductor devices and materials