70 GHz Integrated Silicon Oscillator

J. Buechler; P. Russer; E. Kasper; J. F. Luy; K. M. Strohm

doi:10.1049/el:19880666

70 GHz Integrated Silicon Oscillator

J. Buechler, P. Russer, E. Kasper, J. F. Luy, K. M. Strohm

Technical University of Munich

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Planar oscillators on highly insulating silicon substrate with a disc resonator were fabricated. The active element was an IMPATT diode made from SI MBE material. A maximum CW output power of 200 mW with an efficiency of 4.5% at 73 GHz has been obtained.

Original language	English
Pages (from-to)	977-978
Number of pages	2
Journal	Electronics Letters
Volume	24
Issue number	15
DOIs	https://doi.org/10.1049/el:19880666
State	Published - 1988

Keywords

IMPATTS
Microwave oscillators
Oscillators
Semiconductor devices and materials

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10.1049/el:19880666

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@article{fc03e77b994b45eaad9193ad10a1f831,

title = "70 GHz Integrated Silicon Oscillator",

abstract = "Planar oscillators on highly insulating silicon substrate with a disc resonator were fabricated. The active element was an IMPATT diode made from SI MBE material. A maximum CW output power of 200 mW with an efficiency of 4.5% at 73 GHz has been obtained.",

keywords = "IMPATTS, Microwave oscillators, Oscillators, Semiconductor devices and materials",

author = "J. Buechler and P. Russer and E. Kasper and Luy, {J. F.} and Strohm, {K. M.}",

year = "1988",

doi = "10.1049/el:19880666",

language = "English",

volume = "24",

pages = "977--978",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley & Sons Inc.",

number = "15",

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TY - JOUR

T1 - 70 GHz Integrated Silicon Oscillator

AU - Buechler, J.

AU - Russer, P.

AU - Kasper, E.

AU - Luy, J. F.

AU - Strohm, K. M.

PY - 1988

Y1 - 1988

N2 - Planar oscillators on highly insulating silicon substrate with a disc resonator were fabricated. The active element was an IMPATT diode made from SI MBE material. A maximum CW output power of 200 mW with an efficiency of 4.5% at 73 GHz has been obtained.

AB - Planar oscillators on highly insulating silicon substrate with a disc resonator were fabricated. The active element was an IMPATT diode made from SI MBE material. A maximum CW output power of 200 mW with an efficiency of 4.5% at 73 GHz has been obtained.

KW - IMPATTS

KW - Microwave oscillators

KW - Oscillators

KW - Semiconductor devices and materials

UR - http://www.scopus.com/inward/record.url?scp=0024048253&partnerID=8YFLogxK

U2 - 10.1049/el:19880666

DO - 10.1049/el:19880666

M3 - Article

AN - SCOPUS:0024048253

SN - 0013-5194

VL - 24

SP - 977

EP - 978

JO - Electronics Letters

JF - Electronics Letters

IS - 15

ER -

70 GHz Integrated Silicon Oscillator

Abstract

Keywords

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