5G mm-wave stacked class AB power amplifier in 45 nm PD-SOI CMOS

Radu Ciocoveanu; Robert Weigel; Amelie Hagelauer; Angelika Geiselbrechtinger; Vadim Issakov

doi:10.23919/APMC.2018.8617378

5G mm-wave stacked class AB power amplifier in 45 nm PD-SOI CMOS

Radu Ciocoveanu, Robert Weigel, Amelie Hagelauer, Angelika Geiselbrechtinger, Vadim Issakov

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

10 Scopus citations

Abstract

This paper presents a single-stage stacked Class AB power amplifier (PA) with lower complexity for fifth-generation (5G) K/K_a band front-ends that has been realized in a 45 nm PD-SOI CMOS technology. Measurement results show that the power amplifier achieves a saturated output power (P_s a_t)of 17.3 dBm with a 39.7 % maximum power-added efficiency (PAE_m a_x)at 24 GHz. The output-referred 1-dB compression point (OPldB) is 14.3 dBm and the saturated output power varies from 15.9 dBm to 17.3 dBm for a frequency range from 22 GHz to 28 GHz. Furthermore, the circuit draws 40 mA from a 2.9 V supply and the chip coresizeis0.35 mmx0.25 mm.

Original language	English
Title of host publication	2018 Asia-Pacific Microwave Conference, APMC 2018 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	147-149
Number of pages	3
ISBN (Electronic)	9784902339451
DOIs	https://doi.org/10.23919/APMC.2018.8617378
State	Published - 2 Jul 2018
Externally published	Yes
Event	30th Asia-Pacific Microwave Conference, APMC 2018 - Kyoto, Japan Duration: 6 Nov 2018 → 9 Nov 2018

Publication series

Name	Asia-Pacific Microwave Conference Proceedings, APMC
Volume	2018-November

Conference

Conference	30th Asia-Pacific Microwave Conference, APMC 2018
Country/Territory	Japan
City	Kyoto
Period	6/11/18 → 9/11/18

Keywords

45 nm PD-SOI
5G
High Efficiency
High Power
Stacked PA

Access to Document

10.23919/APMC.2018.8617378

Cite this

Ciocoveanu, R., Weigel, R., Hagelauer, A., Geiselbrechtinger, A., & Issakov, V. (2018). 5G mm-wave stacked class AB power amplifier in 45 nm PD-SOI CMOS. In 2018 Asia-Pacific Microwave Conference, APMC 2018 - Proceedings (pp. 147-149). Article 8617378 (Asia-Pacific Microwave Conference Proceedings, APMC; Vol. 2018-November). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/APMC.2018.8617378

@inproceedings{99699267df9b4d26b4675eca29313262,

title = "5G mm-wave stacked class AB power amplifier in 45 nm PD-SOI CMOS",

abstract = "This paper presents a single-stage stacked Class AB power amplifier (PA) with lower complexity for fifth-generation (5G) K/Ka band front-ends that has been realized in a 45 nm PD-SOI CMOS technology. Measurement results show that the power amplifier achieves a saturated output power (Ps at)of 17.3 dBm with a 39.7 \% maximum power-added efficiency (PAEm ax)at 24 GHz. The output-referred 1-dB compression point (OPldB) is 14.3 dBm and the saturated output power varies from 15.9 dBm to 17.3 dBm for a frequency range from 22 GHz to 28 GHz. Furthermore, the circuit draws 40 mA from a 2.9 V supply and the chip coresizeis0.35 mmx0.25 mm.",

keywords = "45 nm PD-SOI, 5G, High Efficiency, High Power, Stacked PA",

author = "Radu Ciocoveanu and Robert Weigel and Amelie Hagelauer and Angelika Geiselbrechtinger and Vadim Issakov",

note = "Publisher Copyright: {\textcopyright} 2018 IEICE; 30th Asia-Pacific Microwave Conference, APMC 2018 ; Conference date: 06-11-2018 Through 09-11-2018",

year = "2018",

month = jul,

day = "2",

doi = "10.23919/APMC.2018.8617378",

language = "English",

series = "Asia-Pacific Microwave Conference Proceedings, APMC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "147--149",

booktitle = "2018 Asia-Pacific Microwave Conference, APMC 2018 - Proceedings",

}

Ciocoveanu, R, Weigel, R, Hagelauer, A, Geiselbrechtinger, A & Issakov, V 2018, 5G mm-wave stacked class AB power amplifier in 45 nm PD-SOI CMOS. in 2018 Asia-Pacific Microwave Conference, APMC 2018 - Proceedings., 8617378, Asia-Pacific Microwave Conference Proceedings, APMC, vol. 2018-November, Institute of Electrical and Electronics Engineers Inc., pp. 147-149, 30th Asia-Pacific Microwave Conference, APMC 2018, Kyoto, Japan, 6/11/18. https://doi.org/10.23919/APMC.2018.8617378

5G mm-wave stacked class AB power amplifier in 45 nm PD-SOI CMOS. / Ciocoveanu, Radu; Weigel, Robert; Hagelauer, Amelie et al.
2018 Asia-Pacific Microwave Conference, APMC 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. p. 147-149 8617378 (Asia-Pacific Microwave Conference Proceedings, APMC; Vol. 2018-November).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - 5G mm-wave stacked class AB power amplifier in 45 nm PD-SOI CMOS

AU - Ciocoveanu, Radu

AU - Weigel, Robert

AU - Hagelauer, Amelie

AU - Geiselbrechtinger, Angelika

AU - Issakov, Vadim

PY - 2018/7/2

Y1 - 2018/7/2

N2 - This paper presents a single-stage stacked Class AB power amplifier (PA) with lower complexity for fifth-generation (5G) K/Ka band front-ends that has been realized in a 45 nm PD-SOI CMOS technology. Measurement results show that the power amplifier achieves a saturated output power (Ps at)of 17.3 dBm with a 39.7 % maximum power-added efficiency (PAEm ax)at 24 GHz. The output-referred 1-dB compression point (OPldB) is 14.3 dBm and the saturated output power varies from 15.9 dBm to 17.3 dBm for a frequency range from 22 GHz to 28 GHz. Furthermore, the circuit draws 40 mA from a 2.9 V supply and the chip coresizeis0.35 mmx0.25 mm.

AB - This paper presents a single-stage stacked Class AB power amplifier (PA) with lower complexity for fifth-generation (5G) K/Ka band front-ends that has been realized in a 45 nm PD-SOI CMOS technology. Measurement results show that the power amplifier achieves a saturated output power (Ps at)of 17.3 dBm with a 39.7 % maximum power-added efficiency (PAEm ax)at 24 GHz. The output-referred 1-dB compression point (OPldB) is 14.3 dBm and the saturated output power varies from 15.9 dBm to 17.3 dBm for a frequency range from 22 GHz to 28 GHz. Furthermore, the circuit draws 40 mA from a 2.9 V supply and the chip coresizeis0.35 mmx0.25 mm.

KW - 45 nm PD-SOI

KW - 5G

KW - High Efficiency

KW - High Power

KW - Stacked PA

UR - http://www.scopus.com/inward/record.url?scp=85061771145&partnerID=8YFLogxK

U2 - 10.23919/APMC.2018.8617378

DO - 10.23919/APMC.2018.8617378

M3 - Conference contribution

AN - SCOPUS:85061771145

T3 - Asia-Pacific Microwave Conference Proceedings, APMC

SP - 147

EP - 149

BT - 2018 Asia-Pacific Microwave Conference, APMC 2018 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 30th Asia-Pacific Microwave Conference, APMC 2018

Y2 - 6 November 2018 through 9 November 2018

ER -

Ciocoveanu R, Weigel R, Hagelauer A, Geiselbrechtinger A, Issakov V. 5G mm-wave stacked class AB power amplifier in 45 nm PD-SOI CMOS. In 2018 Asia-Pacific Microwave Conference, APMC 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2018. p. 147-149. 8617378. (Asia-Pacific Microwave Conference Proceedings, APMC). doi: 10.23919/APMC.2018.8617378

5G mm-wave stacked class AB power amplifier in 45 nm PD-SOI CMOS

Abstract

Publication series

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Cite this