3.6m GaSb-based type-I lasers with quinternary barriers, operating at room temperature

K. Vizbaras; M. C. Amann

doi:10.1049/el.2011.2032

3.6m GaSb-based type-I lasers with quinternary barriers, operating at room temperature

K. Vizbaras
, M. C. Amann

Chair of Semiconductor Technology

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

Extension of the room-temperature operation wavelength of GaSb-based type-I laser diodes up to 3.6m is presented. Episide-up mounted ridge waveguide lasers with five compressively strained quantum-wells exhibit lasing in pulsed operation with a threshold current densitiy of 862A/cm² at infinite resonator length at 15°C and 20mW of average output power per facet.

Original language	English
Pages (from-to)	980-981
Number of pages	2
Journal	Electronics Letters
Volume	47
Issue number	17
DOIs	https://doi.org/10.1049/el.2011.2032
State	Published - 18 Aug 2011

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10.1049/el.2011.2032

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title = "3.6m GaSb-based type-I lasers with quinternary barriers, operating at room temperature",

abstract = "Extension of the room-temperature operation wavelength of GaSb-based type-I laser diodes up to 3.6m is presented. Episide-up mounted ridge waveguide lasers with five compressively strained quantum-wells exhibit lasing in pulsed operation with a threshold current densitiy of 862A/cm2 at infinite resonator length at 15°C and 20mW of average output power per facet.",

author = "K. Vizbaras and Amann, \{M. C.\}",

year = "2011",

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doi = "10.1049/el.2011.2032",

language = "English",

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journal = "Electronics Letters",

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T1 - 3.6m GaSb-based type-I lasers with quinternary barriers, operating at room temperature

AU - Vizbaras, K.

AU - Amann, M. C.

PY - 2011/8/18

Y1 - 2011/8/18

N2 - Extension of the room-temperature operation wavelength of GaSb-based type-I laser diodes up to 3.6m is presented. Episide-up mounted ridge waveguide lasers with five compressively strained quantum-wells exhibit lasing in pulsed operation with a threshold current densitiy of 862A/cm2 at infinite resonator length at 15°C and 20mW of average output power per facet.

AB - Extension of the room-temperature operation wavelength of GaSb-based type-I laser diodes up to 3.6m is presented. Episide-up mounted ridge waveguide lasers with five compressively strained quantum-wells exhibit lasing in pulsed operation with a threshold current densitiy of 862A/cm2 at infinite resonator length at 15°C and 20mW of average output power per facet.

UR - https://www.scopus.com/pages/publications/80052151732

U2 - 10.1049/el.2011.2032

DO - 10.1049/el.2011.2032

M3 - Article

AN - SCOPUS:80052151732

SN - 0013-5194

VL - 47

SP - 980

EP - 981

JO - Electronics Letters

JF - Electronics Letters

IS - 17

ER -

3.6m GaSb-based type-I lasers with quinternary barriers, operating at room temperature

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