36% Frequency-tuning-range dual-core 60 GHz push-push VCO in 45 nm RF-SOI CMOS technology

Johannes Rimmelspacher, Robert Weigel, Amelie Hagelauer, Vadim Issakov

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

9 Scopus citations

Abstract

This paper presents a millimeter-wave (mm-wave) push-push voltage-controlled oscillator (VCO) in a 45 nm RF-SOI CMOS technology. The circuit aims to meet specifications for FMCW radar applications requiring an ultra-wide PLL modulation bandwidth. The fundamental output of the VCO can be tuned from 27 GHz to 39 GHz, which corresponds to a frequency tuning range (FTR) of 36 %. We extract the 2nd harmonic in a non-invasive way using a transformer. The measured phase noise (PN) at 1 MHz offset from the fundamental carrier varies across the tuning range from -100 dBc/Hz to -90 dBc/Hz. The VCO including output buffers dissipates 65 mW DC power from a single 1 V supply and consumes a chip area of 0.12 mm2.

Original languageEnglish
Title of host publication2017 IEEE MTT-S International Microwave Symposium, IMS 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1356-1358
Number of pages3
ISBN (Electronic)9781509063604
DOIs
StatePublished - 4 Oct 2017
Externally publishedYes
Event2017 IEEE MTT-S International Microwave Symposium, IMS 2017 - Honololu, United States
Duration: 4 Jun 20179 Jun 2017

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
ISSN (Print)0149-645X

Conference

Conference2017 IEEE MTT-S International Microwave Symposium, IMS 2017
Country/TerritoryUnited States
CityHonololu
Period4/06/179/06/17

Keywords

  • CMOS technology
  • Cutoff frequency
  • Millimeter-wave
  • Silicon-on-Insulator
  • System-on-Chip
  • Ultra-wideband

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