@inproceedings{0854f00f67244c19995fd4234299c477,
title = "36% Frequency-tuning-range dual-core 60 GHz push-push VCO in 45 nm RF-SOI CMOS technology",
abstract = "This paper presents a millimeter-wave (mm-wave) push-push voltage-controlled oscillator (VCO) in a 45 nm RF-SOI CMOS technology. The circuit aims to meet specifications for FMCW radar applications requiring an ultra-wide PLL modulation bandwidth. The fundamental output of the VCO can be tuned from 27 GHz to 39 GHz, which corresponds to a frequency tuning range (FTR) of 36 %. We extract the 2nd harmonic in a non-invasive way using a transformer. The measured phase noise (PN) at 1 MHz offset from the fundamental carrier varies across the tuning range from -100 dBc/Hz to -90 dBc/Hz. The VCO including output buffers dissipates 65 mW DC power from a single 1 V supply and consumes a chip area of 0.12 mm2.",
keywords = "CMOS technology, Cutoff frequency, Millimeter-wave, Silicon-on-Insulator, System-on-Chip, Ultra-wideband",
author = "Johannes Rimmelspacher and Robert Weigel and Amelie Hagelauer and Vadim Issakov",
note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 2017 IEEE MTT-S International Microwave Symposium, IMS 2017 ; Conference date: 04-06-2017 Through 09-06-2017",
year = "2017",
month = oct,
day = "4",
doi = "10.1109/MWSYM.2017.8058865",
language = "English",
series = "IEEE MTT-S International Microwave Symposium Digest",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1356--1358",
booktitle = "2017 IEEE MTT-S International Microwave Symposium, IMS 2017",
}