2.5-mW single-mode operation of 1.55-μm buried tunnel junction VCSELs

Markus Ortsiefer, Sevil Baydar, Kirsten Windhorn, Gerhard Böhm, Jürgen Rosskopf, Robert Shau, Enno Rönneberg, Werner Hofmann, Markus Christian Amann

Research output: Contribution to journalArticlepeer-review

43 Scopus citations


We present 1.55-μm wavelength buried tunnel junction InGaAlAs-InP vertical-cavity surface-emitting lasers with low threshold current and high efficiency. An improved mirror design is accomplished with high-reflective low-loss epitaxial InGaAlAs-InAlAs and hybrid dielectric CaF2-ZnS-Au layer stacks, respectively. Lasers with aperture diameters of only around 5 μm exhibit continuous-wave single-mode output powers at room temperature well beyond 2 mW. Threshold voltages and series resistances as low as 0.9 V and 30-40 ω have been measured. The spectral behavior shows excellent performance over the relevant current and temperature range.

Original languageEnglish
Pages (from-to)1596-1598
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number8
StatePublished - Aug 2005


  • InGaAlAs-InP
  • Long-wavelength vertical-cavity surface-emitting laser (VCSEL)
  • Semiconductor laser
  • Tunnel junction


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