TY - GEN
T1 - 2.34 μm electrically-pumped VECSEL with buried tunnel junction
AU - Härkönen, Antti
AU - Bachmann, Alexander
AU - Arafin, Shamsul
AU - Haring, Kimmo
AU - Viheriälä, Jukka
AU - Guina, Mircea
AU - Amann, Markus Christian
PY - 2010
Y1 - 2010
N2 - Mid-infrared semiconductor laser are highly attractive sources for environmental monitoring since the spectral fingerprints of many environmentally important gases are located in the 2-3.3 μm wavelength regime accessible by gallium-antimonide technology. Here an electrically-pumped vertical-external- cavity surface-emitting laser (EPVECSEL) was realized at 2.34 μm wavelength, using a gain mirror based on the GaSb material system. The gain mirror was grown by molecular beam epitaxy on an n-type GaSb substrate and it included a distributed Bragg reflector made of 24-pairs of AlAsSb/GaSb layers, and a gain region with 5 GaInAsSb quantum wells placed in a 3-λ thick micro-cavity. A structured buried tunnel junction (BTJ) with subsequent overgrowth was used in order to obtain efficient current confinement, reduced optical losses and increased electrical conductivity. Different components were tested with aperture sizes varying from 30 μm to 90 μm. Pulsed lasing was obtained with all tested components at 15 °C mount temperature. We obtained a maximum peak power of 1.5 mW at wavelength of 2.34 μm.
AB - Mid-infrared semiconductor laser are highly attractive sources for environmental monitoring since the spectral fingerprints of many environmentally important gases are located in the 2-3.3 μm wavelength regime accessible by gallium-antimonide technology. Here an electrically-pumped vertical-external- cavity surface-emitting laser (EPVECSEL) was realized at 2.34 μm wavelength, using a gain mirror based on the GaSb material system. The gain mirror was grown by molecular beam epitaxy on an n-type GaSb substrate and it included a distributed Bragg reflector made of 24-pairs of AlAsSb/GaSb layers, and a gain region with 5 GaInAsSb quantum wells placed in a 3-λ thick micro-cavity. A structured buried tunnel junction (BTJ) with subsequent overgrowth was used in order to obtain efficient current confinement, reduced optical losses and increased electrical conductivity. Different components were tested with aperture sizes varying from 30 μm to 90 μm. Pulsed lasing was obtained with all tested components at 15 °C mount temperature. We obtained a maximum peak power of 1.5 mW at wavelength of 2.34 μm.
KW - Buried tunnel junction
KW - Electrically-pumped VECSELs
KW - External cavity lasers
KW - GaSb
KW - Gallium-antimonide lasers
KW - Mid-infrared lasers
KW - Semiconductor lasers
KW - Vertical cavity lasers
UR - http://www.scopus.com/inward/record.url?scp=77957885723&partnerID=8YFLogxK
U2 - 10.1117/12.854467
DO - 10.1117/12.854467
M3 - Conference contribution
AN - SCOPUS:77957885723
SN - 9780819481931
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Semiconductor Lasers and Laser Dynamics IV
T2 - Semiconductor Lasers and Laser Dynamics IV
Y2 - 12 April 2010 through 16 April 2010
ER -