2.12 μm inGaAs-inGaAlAs-inP diode lasers grown in solid-source molecular-beam epitaxy

G. K. Kuang; G. Böhm; M. Grau; G. Rösel; R. Meyer; M. C. Amann

doi:10.1063/1.1289799

2.12 μm inGaAs-inGaAlAs-inP diode lasers grown in solid-source molecular-beam epitaxy

G. K. Kuang, G. Böhm, M. Grau, G. Rösel, R. Meyer, M. C. Amann

Chair of Semiconductor Technology

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

We have fabricated InGaAs-InGaAlAs-InP strained quantum well lasers with wavelength as long as 2.12 μm in solid-source molecular-beam epitaxy. A continuous-wave threshold current density of 780 A/cm² at room temperature and a characteristic temperature of 48 K have been achieved.

Original language	English
Pages (from-to)	1091-1092
Number of pages	2
Journal	Applied Physics Letters
Volume	77
Issue number	8
DOIs	https://doi.org/10.1063/1.1289799
State	Published - 21 Aug 2000

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@article{c0e3b0290b074d6ca7645aac4dcb44dd,

title = "2.12 μm inGaAs-inGaAlAs-inP diode lasers grown in solid-source molecular-beam epitaxy",

abstract = "We have fabricated InGaAs-InGaAlAs-InP strained quantum well lasers with wavelength as long as 2.12 μm in solid-source molecular-beam epitaxy. A continuous-wave threshold current density of 780 A/cm2 at room temperature and a characteristic temperature of 48 K have been achieved.",

author = "Kuang, {G. K.} and G. B{\"o}hm and M. Grau and G. R{\"o}sel and R. Meyer and Amann, {M. C.}",

year = "2000",

month = aug,

day = "21",

doi = "10.1063/1.1289799",

language = "English",

volume = "77",

pages = "1091--1092",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "8",

}

TY - JOUR

T1 - 2.12 μm inGaAs-inGaAlAs-inP diode lasers grown in solid-source molecular-beam epitaxy

AU - Kuang, G. K.

AU - Böhm, G.

AU - Grau, M.

AU - Rösel, G.

AU - Meyer, R.

AU - Amann, M. C.

PY - 2000/8/21

Y1 - 2000/8/21

N2 - We have fabricated InGaAs-InGaAlAs-InP strained quantum well lasers with wavelength as long as 2.12 μm in solid-source molecular-beam epitaxy. A continuous-wave threshold current density of 780 A/cm2 at room temperature and a characteristic temperature of 48 K have been achieved.

AB - We have fabricated InGaAs-InGaAlAs-InP strained quantum well lasers with wavelength as long as 2.12 μm in solid-source molecular-beam epitaxy. A continuous-wave threshold current density of 780 A/cm2 at room temperature and a characteristic temperature of 48 K have been achieved.

UR - http://www.scopus.com/inward/record.url?scp=0004892391&partnerID=8YFLogxK

U2 - 10.1063/1.1289799

DO - 10.1063/1.1289799

M3 - Article

AN - SCOPUS:0004892391

SN - 0003-6951

VL - 77

SP - 1091

EP - 1092

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

ER -

2.12 μm inGaAs-inGaAlAs-inP diode lasers grown in solid-source molecular-beam epitaxy

Abstract

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