TY - JOUR
T1 - 2-D finite-element modeling of ZnO schottky diodes with large ideality factors
AU - Arcari, Mario
AU - Scarpa, Giuseppe
AU - Lugli, Paolo
AU - Tallarida, Graziella
AU - Huby, N.
AU - Guziewicz, E.
AU - Krajewski, Tomasz A.
AU - Godlewski, M.
PY - 2012
Y1 - 2012
N2 - In this paper, we complement our previous work on the study of low-temperature rectifying junctions based on Ag/ZnO Schottky barriers. Diodes characterized by very high I ON/I OFF ratio and ideality factors considerably higher than unity, in disagreement with the thermionic emission model, are modeled with a 2-D finite-element simulator. We could discard tunneling and inhomogeneous barrier-height distribution as sources for this anomalous value. A new interface charge layer model was therefore introduced, which is able to reproduce the electrical behavior in devices with large ideality factors without decreasing the rectifying properties.
AB - In this paper, we complement our previous work on the study of low-temperature rectifying junctions based on Ag/ZnO Schottky barriers. Diodes characterized by very high I ON/I OFF ratio and ideality factors considerably higher than unity, in disagreement with the thermionic emission model, are modeled with a 2-D finite-element simulator. We could discard tunneling and inhomogeneous barrier-height distribution as sources for this anomalous value. A new interface charge layer model was therefore introduced, which is able to reproduce the electrical behavior in devices with large ideality factors without decreasing the rectifying properties.
KW - Crossbar memory
KW - Schottky-junction modeling
KW - high ideality factor
KW - zinc oxide (ZnO) contacts
UR - http://www.scopus.com/inward/record.url?scp=84866734747&partnerID=8YFLogxK
U2 - 10.1109/TED.2012.2207459
DO - 10.1109/TED.2012.2207459
M3 - Article
AN - SCOPUS:84866734747
SN - 0018-9383
VL - 59
SP - 2762
EP - 2766
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 10
M1 - 6261533
ER -