TY - CHAP
T1 - 2, 5-Bis(tbutyl)-2, 5-Diaza-1-Germa-Cyclopentane-A New Precursor for Amorphous Germanium Films
AU - Prokop, J.
AU - Merica, R.
AU - Glatz, F.
AU - Veprek, Stan
AU - Klingan, F. R.
AU - Herrmann, W. A.
N1 - Publisher Copyright:
© 2008 VCH Verlagsgesellschaft mbH. All rights reserved..
PY - 2008/6/10
Y1 - 2008/6/10
N2 - A novel organometallic precursor has been synthesized and used for the deposition of amorphous germanium by thermal OM CVD (organometallic chemical vapour deposition) at temperatures below 300 °C. The films are of high purity with an oxygen content below the detection limit of about ≤ 1018 cm-3. OM CVD from a novel precursor 2, 5-Bis(tbutyl)-2, 5-diaza-1-germa-cyclopentane is a promising alternative for the deposition of a-Ge at low temperature. Oxygen, nitrogen, and carbon impurities of the films are very low, but their electrical properties do not reach the quality of the best plasma CVD material. Work is in progress to solve these problems.
AB - A novel organometallic precursor has been synthesized and used for the deposition of amorphous germanium by thermal OM CVD (organometallic chemical vapour deposition) at temperatures below 300 °C. The films are of high purity with an oxygen content below the detection limit of about ≤ 1018 cm-3. OM CVD from a novel precursor 2, 5-Bis(tbutyl)-2, 5-diaza-1-germa-cyclopentane is a promising alternative for the deposition of a-Ge at low temperature. Oxygen, nitrogen, and carbon impurities of the films are very low, but their electrical properties do not reach the quality of the best plasma CVD material. Work is in progress to solve these problems.
UR - http://www.scopus.com/inward/record.url?scp=84959178853&partnerID=8YFLogxK
U2 - 10.1002/9783527620777.ch93a
DO - 10.1002/9783527620777.ch93a
M3 - Chapter
AN - SCOPUS:84959178853
SN - 9783527323470
SP - 815
EP - 820
BT - Organosilicon Chemistry Set
PB - wiley
ER -