2, 5-Bis(tbutyl)-2, 5-Diaza-1-Germa-Cyclopentane - A new precursor for amorphous germanium films

J. Prokop; R. Merica; F. Glatz; S. Veprek; F. R. Klingan; W. A. Herrmann

doi:10.1002/9783527619894.ch93

2, 5-Bis(_tbutyl)-2, 5-Diaza-1-Germa-Cyclopentane - A new precursor for amorphous germanium films

J. Prokop, R. Merica, F. Glatz, S. Veprek, F. R. Klingan, W. A. Herrmann

Technical University of Munich

Technical University of Munich

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

Abstract

A novel organometallic precursor has been synthesized and used for the deposition of amorphous germanium by thermal OM CVD (Qrganometallic chemical zapour deposition) at temperatures below 300 °C. The films are of high purity with an oxygen content below the detection limit of about ≤ 10¹⁸ cm^-3. OM CVD from a novel precursor 2,5-Bis(tbutyl)-2,5-diaza-l-germa-cyclopentane is a promising alternative for the deposition of a-Ge at low temperature. Oxygen, nitrogen, and carbon impurities of the films are very low, but their electrical properties do not reach the quality of the best plasma CVD material. Work is in progress to solve these problems.

Original language	English
Title of host publication	Organosilicon Chemistry II
Subtitle of host publication	From Molecules to Materials
Publisher	Wiley Blackwell
Pages	815-820
Number of pages	6
ISBN (Electronic)	9783527619894
ISBN (Print)	9783527292547
DOIs	https://doi.org/10.1002/9783527619894.ch93
State	Published - 25 Apr 2008

Keywords

Characterization
Deposition
Mechanism
Organometallic
Semiconductor

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10.1002/9783527619894.ch93

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title = "2, 5-Bis(tbutyl)-2, 5-Diaza-1-Germa-Cyclopentane - A new precursor for amorphous germanium films",

abstract = "A novel organometallic precursor has been synthesized and used for the deposition of amorphous germanium by thermal OM CVD (Qrganometallic chemical zapour deposition) at temperatures below 300 °C. The films are of high purity with an oxygen content below the detection limit of about ≤ 1018 cm-3. OM CVD from a novel precursor 2,5-Bis(tbutyl)-2,5-diaza-l-germa-cyclopentane is a promising alternative for the deposition of a-Ge at low temperature. Oxygen, nitrogen, and carbon impurities of the films are very low, but their electrical properties do not reach the quality of the best plasma CVD material. Work is in progress to solve these problems.",

keywords = "Characterization, Deposition, Mechanism, Organometallic, Semiconductor",

author = "J. Prokop and R. Merica and F. Glatz and S. Veprek and Klingan, {F. R.} and Herrmann, {W. A.}",

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doi = "10.1002/9783527619894.ch93",

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AU - Prokop, J.

AU - Merica, R.

AU - Glatz, F.

AU - Veprek, S.

AU - Klingan, F. R.

AU - Herrmann, W. A.

PY - 2008/4/25

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N2 - A novel organometallic precursor has been synthesized and used for the deposition of amorphous germanium by thermal OM CVD (Qrganometallic chemical zapour deposition) at temperatures below 300 °C. The films are of high purity with an oxygen content below the detection limit of about ≤ 1018 cm-3. OM CVD from a novel precursor 2,5-Bis(tbutyl)-2,5-diaza-l-germa-cyclopentane is a promising alternative for the deposition of a-Ge at low temperature. Oxygen, nitrogen, and carbon impurities of the films are very low, but their electrical properties do not reach the quality of the best plasma CVD material. Work is in progress to solve these problems.

AB - A novel organometallic precursor has been synthesized and used for the deposition of amorphous germanium by thermal OM CVD (Qrganometallic chemical zapour deposition) at temperatures below 300 °C. The films are of high purity with an oxygen content below the detection limit of about ≤ 1018 cm-3. OM CVD from a novel precursor 2,5-Bis(tbutyl)-2,5-diaza-l-germa-cyclopentane is a promising alternative for the deposition of a-Ge at low temperature. Oxygen, nitrogen, and carbon impurities of the films are very low, but their electrical properties do not reach the quality of the best plasma CVD material. Work is in progress to solve these problems.

KW - Characterization

KW - Deposition

KW - Mechanism

KW - Organometallic

KW - Semiconductor

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PB - Wiley Blackwell

ER -

2, 5-Bis(_tbutyl)-2, 5-Diaza-1-Germa-Cyclopentane - A new precursor for amorphous germanium films

Abstract

Keywords

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