2 μm wavelength range InP-based type-II quantum well photodiodes heterogeneously integrated on silicon photonic integrated circuits

The heterogeneous integration of InP-based type-II quantum well photodiodes on silicon photonic integrated circuits for the 2 μm wavelength range is presented. A responsivity of 1.2 A/W at a wavelength of 2.32 μm and 0.6 A/W at 2.4 μm wavelength is demonstrated. The photodiodes have a dark current of 12 nA at -0.5 V at room temperature. The absorbing active region of the integrated photodiodes consists of six periods of a "W" - shaped quantum well, also allowing for laser integration on the same platform.