2 μm wavelength range InP-based type-II quantum well photodiodes heterogeneously integrated on silicon photonic integrated circuits

Ruijun Wang; Stephan Sprengel; Muhammad Muneeb; Gerhard Boehm; Roel Baets; Markus Christian Amann; Gunther Roelkens

doi:10.1364/OE.23.026834

2 μm wavelength range InP-based type-II quantum well photodiodes heterogeneously integrated on silicon photonic integrated circuits

Ruijun Wang, Stephan Sprengel, Muhammad Muneeb, Gerhard Boehm, Roel Baets, Markus Christian Amann, Gunther Roelkens

Chair of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

43 Scopus citations

Abstract

The heterogeneous integration of InP-based type-II quantum well photodiodes on silicon photonic integrated circuits for the 2 μm wavelength range is presented. A responsivity of 1.2 A/W at a wavelength of 2.32 μm and 0.6 A/W at 2.4 μm wavelength is demonstrated. The photodiodes have a dark current of 12 nA at -0.5 V at room temperature. The absorbing active region of the integrated photodiodes consists of six periods of a "W" - shaped quantum well, also allowing for laser integration on the same platform.

Original language	English
Pages (from-to)	26834-26841
Number of pages	8
Journal	Optics Express
Volume	23
Issue number	20
DOIs	https://doi.org/10.1364/OE.23.026834
State	Published - 5 Oct 2015

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title = "2 μm wavelength range InP-based type-II quantum well photodiodes heterogeneously integrated on silicon photonic integrated circuits",

abstract = "The heterogeneous integration of InP-based type-II quantum well photodiodes on silicon photonic integrated circuits for the 2 μm wavelength range is presented. A responsivity of 1.2 A/W at a wavelength of 2.32 μm and 0.6 A/W at 2.4 μm wavelength is demonstrated. The photodiodes have a dark current of 12 nA at -0.5 V at room temperature. The absorbing active region of the integrated photodiodes consists of six periods of a {"}W{"} - shaped quantum well, also allowing for laser integration on the same platform.",

author = "Ruijun Wang and Stephan Sprengel and Muhammad Muneeb and Gerhard Boehm and Roel Baets and Amann, {Markus Christian} and Gunther Roelkens",

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T1 - 2 μm wavelength range InP-based type-II quantum well photodiodes heterogeneously integrated on silicon photonic integrated circuits

AU - Wang, Ruijun

AU - Sprengel, Stephan

AU - Muneeb, Muhammad

AU - Boehm, Gerhard

AU - Baets, Roel

AU - Amann, Markus Christian

AU - Roelkens, Gunther

PY - 2015/10/5

Y1 - 2015/10/5

N2 - The heterogeneous integration of InP-based type-II quantum well photodiodes on silicon photonic integrated circuits for the 2 μm wavelength range is presented. A responsivity of 1.2 A/W at a wavelength of 2.32 μm and 0.6 A/W at 2.4 μm wavelength is demonstrated. The photodiodes have a dark current of 12 nA at -0.5 V at room temperature. The absorbing active region of the integrated photodiodes consists of six periods of a "W" - shaped quantum well, also allowing for laser integration on the same platform.

AB - The heterogeneous integration of InP-based type-II quantum well photodiodes on silicon photonic integrated circuits for the 2 μm wavelength range is presented. A responsivity of 1.2 A/W at a wavelength of 2.32 μm and 0.6 A/W at 2.4 μm wavelength is demonstrated. The photodiodes have a dark current of 12 nA at -0.5 V at room temperature. The absorbing active region of the integrated photodiodes consists of six periods of a "W" - shaped quantum well, also allowing for laser integration on the same platform.

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VL - 23

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EP - 26841

JO - Optics Express

JF - Optics Express

IS - 20

ER -

2 μm wavelength range InP-based type-II quantum well photodiodes heterogeneously integrated on silicon photonic integrated circuits

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