1.3 μm InGaAlAs/InP VCSEL for 10G ethernet

W. Hofmann; M. Ortsiefer; E. Rönneberg; C. Neumeyr; G. Böhm; M. C. Amann

doi:10.1109/ISLC.2008.4635984

1.3 μm InGaAlAs/InP VCSEL for 10G ethernet

W. Hofmann, M. Ortsiefer, E. Rönneberg, C. Neumeyr, G. Böhm, M. C. Amann

Chair of Semiconductor Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

7 Scopus citations

Abstract

1.3 μ m InGaAlAs/InP VCSELs for 10G Ethernet solutions are presented. High modulation bandwidth and error-free data transmission at 10.3 Gb/s up to 75°C over 10 km of SMF is demonstrated.

Original language	English
Title of host publication	21st IEEE International Semiconductor Laser Conference, ISLC 2008
Pages	11-12
Number of pages	2
DOIs	https://doi.org/10.1109/ISLC.2008.4635984
State	Published - 2008
Event	21st IEEE International Semiconductor Laser Conference, ISLC 2008 - Sorrento, Italy Duration: 14 Sep 2008 → 18 Sep 2008

Publication series

Name	Conference Digest - IEEE International Semiconductor Laser Conference
ISSN (Print)	0899-9406

Conference

Conference	21st IEEE International Semiconductor Laser Conference, ISLC 2008
Country/Territory	Italy
City	Sorrento
Period	14/09/08 → 18/09/08

Access to Document

10.1109/ISLC.2008.4635984

Cite this

@inproceedings{b1d909e7c9f44130aa0ad6385d0b337d,

title = "1.3 μm InGaAlAs/InP VCSEL for 10G ethernet",

abstract = "1.3 μ m InGaAlAs/InP VCSELs for 10G Ethernet solutions are presented. High modulation bandwidth and error-free data transmission at 10.3 Gb/s up to 75°C over 10 km of SMF is demonstrated.",

author = "W. Hofmann and M. Ortsiefer and E. R{\"o}nneberg and C. Neumeyr and G. B{\"o}hm and Amann, {M. C.}",

year = "2008",

doi = "10.1109/ISLC.2008.4635984",

language = "English",

isbn = "9781424417834",

series = "Conference Digest - IEEE International Semiconductor Laser Conference",

pages = "11--12",

booktitle = "21st IEEE International Semiconductor Laser Conference, ISLC 2008",

note = "21st IEEE International Semiconductor Laser Conference, ISLC 2008 ; Conference date: 14-09-2008 Through 18-09-2008",

}

Hofmann, W, Ortsiefer, M, Rönneberg, E, Neumeyr, C, Böhm, G & Amann, MC 2008, 1.3 μm InGaAlAs/InP VCSEL for 10G ethernet. in 21st IEEE International Semiconductor Laser Conference, ISLC 2008., 4635984, Conference Digest - IEEE International Semiconductor Laser Conference, pp. 11-12, 21st IEEE International Semiconductor Laser Conference, ISLC 2008, Sorrento, Italy, 14/09/08. https://doi.org/10.1109/ISLC.2008.4635984

TY - GEN

T1 - 1.3 μm InGaAlAs/InP VCSEL for 10G ethernet

AU - Hofmann, W.

AU - Ortsiefer, M.

AU - Rönneberg, E.

AU - Neumeyr, C.

AU - Böhm, G.

AU - Amann, M. C.

PY - 2008

Y1 - 2008

N2 - 1.3 μ m InGaAlAs/InP VCSELs for 10G Ethernet solutions are presented. High modulation bandwidth and error-free data transmission at 10.3 Gb/s up to 75°C over 10 km of SMF is demonstrated.

AB - 1.3 μ m InGaAlAs/InP VCSELs for 10G Ethernet solutions are presented. High modulation bandwidth and error-free data transmission at 10.3 Gb/s up to 75°C over 10 km of SMF is demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=56749104676&partnerID=8YFLogxK

U2 - 10.1109/ISLC.2008.4635984

DO - 10.1109/ISLC.2008.4635984

M3 - Conference contribution

AN - SCOPUS:56749104676

SN - 9781424417834

T3 - Conference Digest - IEEE International Semiconductor Laser Conference

SP - 11

EP - 12

BT - 21st IEEE International Semiconductor Laser Conference, ISLC 2008

T2 - 21st IEEE International Semiconductor Laser Conference, ISLC 2008

Y2 - 14 September 2008 through 18 September 2008

ER -

1.3 μm InGaAlAs/InP VCSEL for 10G ethernet

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Cite this