1.3 μm high-power short-cavity VCSELs for high-speed applications

M. Müller; C. Grasse; K. Saller; T. Gründl; G. Böhm; M. Ortsiefer; M. C. Amann

doi:10.1364/cleo_si.2012.cw3n.2

1.3 μm high-power short-cavity VCSELs for high-speed applications

M. Müller
, C. Grasse
, K. Saller
, T. Gründl
, G. Böhm
, M. Ortsiefer
, M. C. Amann

Chair of Semiconductor Technology

Walter Schottky Institut
Vertilas GmbH

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

9 Scopus citations

Abstract

InP-based 1.3μm VCSELs employing two dielectric DBRs are presented. Because of reduced internal losses in the DBRs, high slope-efficiencies above 70%, and output-powers of 4.8mW are reported. The same devices feature modulation bandwidths beyond 12GHz.

Original language	English
Title of host publication	CLEO
Subtitle of host publication	Science and Innovations, CLEO_SI 2012
Publisher	Optical Society of America (OSA)
Pages	CW3N.2
ISBN (Print)	9781557529435
DOIs	https://doi.org/10.1364/cleo_si.2012.cw3n.2
State	Published - 2012
Event	CLEO: Science and Innovations, CLEO_SI 2012 - San Jose, CA, United States Duration: 6 May 2012 → 11 May 2012

Publication series

Name	CLEO: Science and Innovations, CLEO_SI 2012

Conference

Conference	CLEO: Science and Innovations, CLEO_SI 2012
Country/Territory	United States
City	San Jose, CA
Period	6/05/12 → 11/05/12

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10.1364/cleo_si.2012.cw3n.2

Cite this

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title = "1.3 μm high-power short-cavity VCSELs for high-speed applications",

abstract = "InP-based 1.3μm VCSELs employing two dielectric DBRs are presented. Because of reduced internal losses in the DBRs, high slope-efficiencies above 70\%, and output-powers of 4.8mW are reported. The same devices feature modulation bandwidths beyond 12GHz.",

author = "M. M{\"u}ller and C. Grasse and K. Saller and T. Gr{\"u}ndl and G. B{\"o}hm and M. Ortsiefer and Amann, \{M. C.\}",

year = "2012",

doi = "10.1364/cleo\_si.2012.cw3n.2",

language = "English",

isbn = "9781557529435",

series = "CLEO: Science and Innovations, CLEO\_SI 2012",

publisher = "Optical Society of America (OSA)",

pages = "CW3N.2",

booktitle = "CLEO",

note = "CLEO: Science and Innovations, CLEO\_SI 2012 ; Conference date: 06-05-2012 Through 11-05-2012",

}

Müller, M, Grasse, C, Saller, K, Gründl, T, Böhm, G, Ortsiefer, M & Amann, MC 2012, 1.3 μm high-power short-cavity VCSELs for high-speed applications. in CLEO: Science and Innovations, CLEO_SI 2012. CLEO: Science and Innovations, CLEO_SI 2012, Optical Society of America (OSA), pp. CW3N.2, CLEO: Science and Innovations, CLEO_SI 2012, San Jose, CA, United States, 6/05/12. https://doi.org/10.1364/cleo_si.2012.cw3n.2

TY - GEN

T1 - 1.3 μm high-power short-cavity VCSELs for high-speed applications

AU - Müller, M.

AU - Grasse, C.

AU - Saller, K.

AU - Gründl, T.

AU - Böhm, G.

AU - Ortsiefer, M.

AU - Amann, M. C.

PY - 2012

Y1 - 2012

N2 - InP-based 1.3μm VCSELs employing two dielectric DBRs are presented. Because of reduced internal losses in the DBRs, high slope-efficiencies above 70%, and output-powers of 4.8mW are reported. The same devices feature modulation bandwidths beyond 12GHz.

AB - InP-based 1.3μm VCSELs employing two dielectric DBRs are presented. Because of reduced internal losses in the DBRs, high slope-efficiencies above 70%, and output-powers of 4.8mW are reported. The same devices feature modulation bandwidths beyond 12GHz.

UR - https://www.scopus.com/pages/publications/84890748208

U2 - 10.1364/cleo_si.2012.cw3n.2

DO - 10.1364/cleo_si.2012.cw3n.2

M3 - Conference contribution

AN - SCOPUS:84890748208

SN - 9781557529435

T3 - CLEO: Science and Innovations, CLEO_SI 2012

SP - CW3N.2

BT - CLEO

PB - Optical Society of America (OSA)

T2 - CLEO: Science and Innovations, CLEO_SI 2012

Y2 - 6 May 2012 through 11 May 2012

ER -

1.3 μm high-power short-cavity VCSELs for high-speed applications

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