10-Gb/s data transmission using BCB passivated 1.55-μm InGaAlAs-InP VCSELs

W. Hofmann; N. H. Zhu; M. Ortsiefer; G. Böhm; J. Rosskopf; L. Chao; S. Zhang; M. Maute; M. C. Amann

doi:10.1109/LPT.2005.863184

10-Gb/s data transmission using BCB passivated 1.55-μm InGaAlAs-InP VCSELs

W. Hofmann
, N. H. Zhu
, M. Ortsiefer
, G. Böhm
, J. Rosskopf
, L. Chao
, S. Zhang
, M. Maute
, M. C. Amann

Chair of Semiconductor Technology

Walter Schottky Institut
National Research Center for Optoelectronic Technology
Vertilas GmbH
IEEE

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

Molecular-beam-epitaxy-grown InGaAlAs-InP vertical-cavity surface-emitting lasers with buried tunnel junction for 1.55-μm wavelength, passivated with benzocyclobutene (BCB) and coplanar contacts are presented. The devices show 3-dB modulation frequencies above 8 GHz (small signal modulation) and wide open eye diagrams up to 10 Gb/s over more than 4.6-km ITU-T G.653 fiber (data transmission experiment).

Original language	English
Pages (from-to)	424-426
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	18
Issue number	2
DOIs	https://doi.org/10.1109/LPT.2005.863184
State	Published - 15 Jan 2006

Keywords

InP
Optical modulation
Semiconductor lasers
Telecommunications
Vertical-cavity surface-emitting lasers (VCSELs)

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10.1109/LPT.2005.863184

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@article{07af16598c3c4d339eedb04b0e0a3f18,

title = "10-Gb/s data transmission using BCB passivated 1.55-μm InGaAlAs-InP VCSELs",

abstract = "Molecular-beam-epitaxy-grown InGaAlAs-InP vertical-cavity surface-emitting lasers with buried tunnel junction for 1.55-μm wavelength, passivated with benzocyclobutene (BCB) and coplanar contacts are presented. The devices show 3-dB modulation frequencies above 8 GHz (small signal modulation) and wide open eye diagrams up to 10 Gb/s over more than 4.6-km ITU-T G.653 fiber (data transmission experiment).",

keywords = "InP, Optical modulation, Semiconductor lasers, Telecommunications, Vertical-cavity surface-emitting lasers (VCSELs)",

author = "W. Hofmann and Zhu, \{N. H.\} and M. Ortsiefer and G. B{\"o}hm and J. Rosskopf and L. Chao and S. Zhang and M. Maute and Amann, \{M. C.\}",

year = "2006",

month = jan,

day = "15",

doi = "10.1109/LPT.2005.863184",

language = "English",

volume = "18",

pages = "424--426",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - 10-Gb/s data transmission using BCB passivated 1.55-μm InGaAlAs-InP VCSELs

AU - Hofmann, W.

AU - Zhu, N. H.

AU - Ortsiefer, M.

AU - Böhm, G.

AU - Rosskopf, J.

AU - Chao, L.

AU - Zhang, S.

AU - Maute, M.

AU - Amann, M. C.

PY - 2006/1/15

Y1 - 2006/1/15

N2 - Molecular-beam-epitaxy-grown InGaAlAs-InP vertical-cavity surface-emitting lasers with buried tunnel junction for 1.55-μm wavelength, passivated with benzocyclobutene (BCB) and coplanar contacts are presented. The devices show 3-dB modulation frequencies above 8 GHz (small signal modulation) and wide open eye diagrams up to 10 Gb/s over more than 4.6-km ITU-T G.653 fiber (data transmission experiment).

AB - Molecular-beam-epitaxy-grown InGaAlAs-InP vertical-cavity surface-emitting lasers with buried tunnel junction for 1.55-μm wavelength, passivated with benzocyclobutene (BCB) and coplanar contacts are presented. The devices show 3-dB modulation frequencies above 8 GHz (small signal modulation) and wide open eye diagrams up to 10 Gb/s over more than 4.6-km ITU-T G.653 fiber (data transmission experiment).

KW - InP

KW - Optical modulation

KW - Semiconductor lasers

KW - Telecommunications

KW - Vertical-cavity surface-emitting lasers (VCSELs)

UR - https://www.scopus.com/pages/publications/33747807807

U2 - 10.1109/LPT.2005.863184

DO - 10.1109/LPT.2005.863184

M3 - Article

AN - SCOPUS:33747807807

SN - 1041-1135

VL - 18

SP - 424

EP - 426

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 2

ER -

10-Gb/s data transmission using BCB passivated 1.55-μm InGaAlAs-InP VCSELs

Abstract

Keywords

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