10-Gb/s data transmission using BCB passivated 1.55-μm InGaAlAs-InP VCSELs

W. Hofmann, N. H. Zhu, M. Ortsiefer, G. Böhm, J. Rosskopf, L. Chao, S. Zhang, M. Maute, M. C. Amann

Research output: Contribution to journalArticlepeer-review

38 Scopus citations

Abstract

Molecular-beam-epitaxy-grown InGaAlAs-InP vertical-cavity surface-emitting lasers with buried tunnel junction for 1.55-μm wavelength, passivated with benzocyclobutene (BCB) and coplanar contacts are presented. The devices show 3-dB modulation frequencies above 8 GHz (small signal modulation) and wide open eye diagrams up to 10 Gb/s over more than 4.6-km ITU-T G.653 fiber (data transmission experiment).

Original languageEnglish
Pages (from-to)424-426
Number of pages3
JournalIEEE Photonics Technology Letters
Volume18
Issue number2
DOIs
StatePublished - 15 Jan 2006

Keywords

  • InP
  • Optical modulation
  • Semiconductor lasers
  • Telecommunications
  • Vertical-cavity surface-emitting lasers (VCSELs)

Fingerprint

Dive into the research topics of '10-Gb/s data transmission using BCB passivated 1.55-μm InGaAlAs-InP VCSELs'. Together they form a unique fingerprint.

Cite this