TY - JOUR
T1 - β‐CoGa and ϵ‐NiIn Films from Organometallic Single‐Source Precursors
T2 - Ligand‐Control of the Film Composition
AU - Fischer, Roland
AU - Scherer, Wolfgang
AU - Kleine, Matthias
PY - 1993/5
Y1 - 1993/5
N2 - The chemical vapor deposition of binary materials from single‐source precursors is particularly advantageous when all the factors essential for the layering process are incorporated in the molecular structure of the precursor, and thus only pressure and temperature remain as regulating parameters. This concept is demonstrated with heterodinuclear complexes such as 1, whose mild pyrolysis results in intermetallic films, which are of interest for microelectronic purposes. (Figure Presented.)
AB - The chemical vapor deposition of binary materials from single‐source precursors is particularly advantageous when all the factors essential for the layering process are incorporated in the molecular structure of the precursor, and thus only pressure and temperature remain as regulating parameters. This concept is demonstrated with heterodinuclear complexes such as 1, whose mild pyrolysis results in intermetallic films, which are of interest for microelectronic purposes. (Figure Presented.)
UR - https://www.scopus.com/pages/publications/33745429244
U2 - 10.1002/anie.199307481
DO - 10.1002/anie.199307481
M3 - Article
AN - SCOPUS:33745429244
SN - 0570-0833
VL - 32
SP - 748
EP - 750
JO - Angewandte Chemie International Edition in English
JF - Angewandte Chemie International Edition in English
IS - 5
ER -