Material Science
Surface (Surface Science)
100%
Amorphous Silicon
86%
Silicon
82%
Film
82%
Diamond
73%
Thin Films
55%
Molecular Beam Epitaxy
55%
Heterojunction
52%
Density
46%
Photoluminescence
42%
Photoconductivity
31%
Luminescence
30%
Nanowire
30%
Electronic Property
29%
Electron Paramagnetic Resonance Spectroscopy
29%
Aluminum Nitride
25%
Sapphire
25%
Optical Property
24%
Phase Composition
22%
Transistor
21%
Field Effect Transistor
20%
Germanium
20%
Boron
19%
Doping (Additives)
19%
Atomic Force Microscopy
18%
Chemical Vapor Deposition
18%
Nitride Compound
18%
Annealing
17%
Defect Density
16%
Solar Cell
15%
Carrier Concentration
15%
Porous Silicon
15%
Activation Energy
15%
Structural Property
14%
Gallium Nitride
14%
Piezoelectricity
13%
Aluminum
13%
Gallium Arsenide
13%
Nanoparticle
12%
Epitaxial Film
12%
Nanocrystalline
12%
Oxidation Reaction
12%
Microcrystalline Silicon
11%
Schottky Diode
11%
Charge Carrier
11%
Monolayers
10%
Nanostructure
10%
Oxide Compound
10%
Raman Spectroscopy
10%
X-Ray Diffraction
9%
Keyphrases
A-Si
54%
Hydrogenated Amorphous Silicon
51%
Molecular Beam Epitaxy
40%
Diamond
36%
Amorphous Silicon
34%
Electron Spin Resonance
32%
Electronic Properties
28%
GaN Heterostructure
27%
Annealing
26%
Photoconductivity
25%
Structural Properties
25%
Electrically Detected Magnetic Resonance
23%
Optical Properties
23%
Dangling Bonds
22%
Undoped
22%
Diamond Surface
21%
Siloxene
21%
Atomic Force Microscopy
20%
Heterostructure
20%
GaN Nanowires
19%
2-dimensional Electron Gas (2DEG)
19%
Room Temperature
19%
Photoluminescence
18%
Cm(III)
18%
Plasma-induced
18%
Crystalline Silicon
18%
Metal-organic Chemical Vapor Deposition (MOCVD)
17%
AlxGa1-xN
17%
Aluminum Gallium Nitride (AlGaN)
17%
Porous Silicon
17%
Temperature Effect
17%
AlGaN-GaN
16%
Boron Doping
16%
Low Temperature
16%
Spin-dependent
16%
Epitaxial
15%
Light-induced
15%
Band Gap
15%
Luminescence
15%
Recombination
14%
Defect Density
14%
III-nitrides
14%
Plasma-assisted Molecular Beam Epitaxy
14%
Multicrystalline Silicon
13%
GaN Films
13%
Gallium Nitride
13%
Spin-wave Resonance
13%
Conduction Band
13%
Field-effect Transistors
13%
Amorphous Germanium
12%
Engineering
Diamond
64%
Thin Films
44%
Heterostructures
39%
Hydrogenated Amorphous Silicon
30%
Band Gap
29%
Dangling Bond
27%
Chemical Vapor Deposition
25%
Two Dimensional
23%
Nanowire
20%
Low-Temperature
19%
Atomic Force Microscopy
16%
Solar Cell
15%
Transients
15%
Ray Diffraction
15%
Photocurrent
15%
Carrier Concentration
15%
Field-Effect Transistor
14%
Valence Band
13%
Heterojunctions
13%
Nitride
13%
Activation Energy
13%
Microcrystalline Silicon
13%
Vapor Deposition
13%
Sapphire Substrate
12%
Room Temperature
12%
Phase Composition
12%
Conductive
11%
Crystalline Silicon
11%
Epitaxial Film
11%
Raman Spectra
11%
Defect Density
10%
Piezoelectric
10%
Passivation
10%
Absorptivity
10%
Charge Carrier
9%
High Resolution
9%
Conduction Band
9%
Dopants
9%
Polysilicon
9%
Nanocrystalline
8%
Al Content
8%
Temperature Dependence
8%
Porous Silicon
8%
Structural Property
8%
Lattice Constant
8%
Quantum Well
8%
Doping Level
7%
Film Solar Cell
7%
Buffer Layer
7%
Pulsed Laser
7%
