Personal profile
Expertise related to UN Sustainable Development Goals
In 2015, UN member states agreed to 17 global Sustainable Development Goals (SDGs) to end poverty, protect the planet and ensure prosperity for all. This person’s work contributes towards the following SDG(s):
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SDG 3 Good Health and Well-being -
SDG 7 Affordable and Clean Energy
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Dive into the research topics where Martin Stutzmann is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
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Collaborations and top research areas from the last five years
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Selective growth and characterization of GaN nanowires on SiC substrates
Höldrich, T., Wieland, A., Pantle, F., Winnerl, J. & Stutzmann, M., 1 Sep 2025, In: Journal of Crystal Growth. 665, 128194.Research output: Contribution to journal › Article › peer-review
Open Access -
Amorphous nitride semiconductors with highly tunable optical and electronic properties: the benefits of disorder in Ca-Zn-N thin films
Sirotti, E., Böhm, S., Grötzner, G., Christis, M., Wagner, L. I., Wolz, L., Munnik, F., Eichhorn, J., Stutzmann, M., Streibel, V. & Sharp, I. D., 16 Dec 2024, In: Materials Horizons. 12, 6, p. 1971-1980 10 p.Research output: Contribution to journal › Article › peer-review
Open Access -
Amorphous nitride semiconductors with highly tunable optical and electronic properties: the benefits of disorder in Ca-Zn-N thin films
Sirotti, E., Böhm, S., Grötzner, G., Christis, M., Wagner, L. I., Wolz, L., Munnik, F., Eichhorn, J., Stutzmann, M., Streibel, V. & Sharp, I. D., 2024, (Accepted/In press) In: Materials Horizons.Research output: Contribution to journal › Article › peer-review
Open Access -
Annealing-Free Ohmic Contacts to n-Type GaN via Hydrogen Plasma-Assisted Atomic Layer Deposition of Sub-Nanometer AlOx
Christis, M., Henning, A., Bartl, J. D., Zeidler, A., Rieger, B., Stutzmann, M. & Sharp, I. D., 2 Feb 2024, In: Advanced Materials Interfaces. 11, 4, 2300758.Research output: Contribution to journal › Article › peer-review
Open Access3 Scopus citations -
Influencing the surface quality of free-standing wurtzite gallium nitride in ultra-high vacuum: Stoichiometry control by ammonia and bromine adsorption
Rostami, M., Yang, B., Haag, F., Allegretti, F., Chi, L., Stutzmann, M. & Barth, J. V., 15 Nov 2024, In: Applied Surface Science. 674, 160880.Research output: Contribution to journal › Article › peer-review
Open Access