Keyphrases
Absolute Value
7%
Aluminum Oxide
9%
Buffer Layer
27%
Coated Conductor
26%
Critical Current Density
16%
Epitaxial
16%
Epitaxial Growth
6%
Film Deposition
5%
Film Thickness
8%
Flux Penetration
5%
Gallium Arsenide
11%
Helium
8%
High Critical Current Density
6%
In Situ
8%
Inclined Substrate Deposition
17%
Josephson Effect
6%
Kapitza
10%
Kapitza Conductance
11%
LaAlO3
6%
Large Area Deposition
5%
Liquid Helium
7%
Low Temperature
8%
Magnesium Oxide
6%
MgO Buffer Layer
11%
MgO Substrate
6%
Microbolometer
5%
Penetration Depth
6%
Phonon Scattering
7%
Phonon Spectroscopy
10%
Phonon Transmission
5%
Phonons
56%
Polycrystalline Substrate
6%
Quench Propagation
5%
Reel-to-reel
10%
Reflection High-energy Electron Diffraction
6%
Si Substrate
9%
Silicon Substrate
9%
SrTiO3
8%
Superconducting Tunnel Junctions
8%
Superconductor
11%
Surface Resistance
14%
Thermal Co-evaporation
24%
Ultra-high Frequency
8%
Wafer
6%
YBa2Cu3O7
58%
YBa2Cu3O7-δ Thin Film
13%
YBaCuO
18%
YBCO Coated Conductor
5%
YBCO Film
40%
YBCO Thin Film
7%
Material Science
Aluminum Oxide
8%
Buffer Layer
30%
Conductor
29%
Density
21%
Epitaxy
5%
Film
100%
Film Deposition
5%
Film Thickness
8%
Gallium Arsenide
10%
Ion Beam Assisted Deposition
5%
Magnesium Oxide
34%
Monolayers
7%
Reflection High-Energy Electron Diffraction
5%
Sapphire
11%
Silicon
29%
Single Crystal
8%
Superconducting Film
6%
Superconducting Material
17%
Surface (Surface Science)
28%
Tape Coating
5%
Thin Films
40%
Engineering
Buffer Layer
31%
Deposited Film
7%
Gallium Arsenide
9%
Limiters
8%
Low-Temperature
6%
Mean Free Path
5%
Penetration Depth
6%
Power Switch
5%
Reflectance
7%
Resistive
10%
Rotating Disk
5%
Si Substrate
7%
Silicon Substrate
6%
Superconductor
13%
Surface Resistance
10%
Thin Films
35%
