Chair of Experimental Semiconductor Physics (2017 — 2024)

TUPHEHPTUMonline:48637 2017-08-01 mediaTUM:1470568

Annealing-Free Ohmic Contacts to n-Type GaN via Hydrogen Plasma-Assisted Atomic Layer Deposition of Sub-Nanometer AlO_x
Christis, M., Henning, A., Bartl, J. D., Zeidler, A., Rieger, B., Stutzmann, M. & Sharp, I. D., 2 Feb 2024, In: Advanced Materials Interfaces. 11, 4, 2300758.
Research output: Contribution to journal › Article › peer-review

Open Access
Beyond Cation Disorder: Site Symmetry-Tuned Optoelectronic Properties of the Ternary Nitride Photoabsorber ZrTaN₃
Sirotti, E., Wagner, L. I., Jiang, C. M., Eichhorn, J., Munnik, F., Streibel, V., Schilcher, M. J., März, B., Hegner, F. S., Kuhl, M., Höldrich, T., Müller-Caspary, K., Egger, D. A. & Sharp, I. D., 2024, (Accepted/In press) In: Advanced Energy Materials.
Research output: Contribution to journal › Article › peer-review

Open Access
Defect Engineering of Ta₃N₅ Photoanodes: Enhancing Charge Transport and Photoconversion Efficiencies via Ti Doping
Wagner, L. I., Sirotti, E., Brune, O., Grötzner, G., Eichhorn, J., Santra, S., Munnik, F., Olivi, L., Pollastri, S., Streibel, V. & Sharp, I. D., 22 Jan 2024, In: Advanced Functional Materials. 34, 4, 2306539.
Research output: Contribution to journal › Article › peer-review

Open Access
5 Scopus citations

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