Wannier-Stark oscillations in Zener tunneling currents

H. Nagasawa, K. Murayama, M. Yamaguchi, M. Morifuji, C. Hamaguchi, A. Di Carlo, P. Vogl, G. Böhm, G. Tränkle, G. Weimann

Publikation: Beitrag in FachzeitschriftArtikelBegutachtung

3 Zitate (Scopus)

Abstract

We have performed measurements of current-voltage characteristics at low temperatures in p-i-n diodes with a thin intrinsic region containing several (GaAs)5/(AlAs)2 quantum wells. Under reverse bias, we found an oscillatory structure in the second derivative of the Zener tunneling current. The measurements agree well with theoretical calculations that are based on a transfer matrix approach and a realistic multi-band and multi-channel tight-binding scattering theory. The experiments show that Wannier-Stark oscillations in semiconductors occur in the d.c. current, in the regime of interband tunneling.

OriginalspracheEnglisch
Seiten (von - bis)245-247
Seitenumfang3
FachzeitschriftSolid-State Electronics
Jahrgang40
Ausgabenummer1-8
DOIs
PublikationsstatusVeröffentlicht - 1996

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