Ultrafast few-fermion dynamics in single self-assembled InGaAs/GaAs quantum dots

M. Betz, M. Zecherle, C. Ruppert, E. C. Clark, G. Abstreiter, J. J. Finley

Publikation: Beitrag in Buch/Bericht/KonferenzbandKonferenzbeitragBegutachtung

Abstract

We review a comprehensive study of the ultrafast optoelectronic properties of a single self-assembled InGaAs/GaAs quantum dot. While manipulation of the artificial atom relies on two widely and independently tunable picoseconds pulse trains, sensitive readout is achieved via the ~pA photocurrent of the diode device. In particular, the absorption changes after occupation of an s-shell exciton reveal a biexciton absorption line as well as previously unobserved p-shell transitions in the presence of s-shell population. In addition, time-resolved data directly maps the picosecond tunneling times of electrons and holes out of the dot. Beyond these incoherent phenomena, we also realize coherent QD manipulations. Those comprise well-known excitonic Rabi-oscillations as well as single-pulse biexciton generation and conditional Rabi-oscillations of the exciton-biexciton transition after deterministic exciton preparation.

OriginalspracheEnglisch
TitelUltrafast Phenomena in Semiconductors and Nanostructure Materials XV
DOIs
PublikationsstatusVeröffentlicht - 2011
VeranstaltungUltrafast Phenomena in Semiconductors and Nanostructure Materials XV - San Francisco, CA, USA/Vereinigte Staaten
Dauer: 23 Jan. 201126 Jan. 2011

Publikationsreihe

NameProceedings of SPIE - The International Society for Optical Engineering
Band7937
ISSN (Print)0277-786X

Konferenz

KonferenzUltrafast Phenomena in Semiconductors and Nanostructure Materials XV
Land/GebietUSA/Vereinigte Staaten
OrtSan Francisco, CA
Zeitraum23/01/1126/01/11

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