Ultrafast electron-phonon scattering in semiconductors studied by nondegenerate four-wave mixing

M. Betz; G. Göger; A. Leitenstorfer; K. Ortner; C. R. Becker; G. Böhm; A. Laubereau

doi:10.1103/PhysRevB.60.R11265

Ultrafast electron-phonon scattering in semiconductors studied by nondegenerate four-wave mixing

M. Betz, G. Göger, A. Leitenstorfer, K. Ortner, C. R. Becker, G. Böhm, A. Laubereau

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Abstract

Nondegenerate four-wave-mixing allows one to monitor the femtosecond relaxation of free carriers in GaAs and CdTe at densities as low as 2×10¹⁵ cm^-3. The energy relaxation time of electrons via LO-phonon emission is determined to be 240±20 fs in GaAs. In more polar CdTe, this time constant is found to be as short as 70±15 fs which is even shorter than the phonon oscillation period of 200 fs.

Originalsprache	Englisch
Seiten (von - bis)	R11265-R11268
Fachzeitschrift	Physical Review B - Condensed Matter and Materials Physics
Jahrgang	60
Ausgabenummer	16
DOIs	https://doi.org/10.1103/PhysRevB.60.R11265
Publikationsstatus	Veröffentlicht - 1999

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@article{0b413af8780e4ae095297a57ffd684ac,

title = "Ultrafast electron-phonon scattering in semiconductors studied by nondegenerate four-wave mixing",

abstract = "Nondegenerate four-wave-mixing allows one to monitor the femtosecond relaxation of free carriers in GaAs and CdTe at densities as low as 2×1015 cm-3. The energy relaxation time of electrons via LO-phonon emission is determined to be 240±20 fs in GaAs. In more polar CdTe, this time constant is found to be as short as 70±15 fs which is even shorter than the phonon oscillation period of 200 fs.",

author = "M. Betz and G. G{\"o}ger and A. Leitenstorfer and K. Ortner and Becker, {C. R.} and G. B{\"o}hm and A. Laubereau",

year = "1999",

doi = "10.1103/PhysRevB.60.R11265",

language = "English",

volume = "60",

pages = "R11265--R11268",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "16",

}

TY - JOUR

T1 - Ultrafast electron-phonon scattering in semiconductors studied by nondegenerate four-wave mixing

AU - Betz, M.

AU - Göger, G.

AU - Leitenstorfer, A.

AU - Ortner, K.

AU - Becker, C. R.

AU - Böhm, G.

AU - Laubereau, A.

PY - 1999

Y1 - 1999

N2 - Nondegenerate four-wave-mixing allows one to monitor the femtosecond relaxation of free carriers in GaAs and CdTe at densities as low as 2×1015 cm-3. The energy relaxation time of electrons via LO-phonon emission is determined to be 240±20 fs in GaAs. In more polar CdTe, this time constant is found to be as short as 70±15 fs which is even shorter than the phonon oscillation period of 200 fs.

AB - Nondegenerate four-wave-mixing allows one to monitor the femtosecond relaxation of free carriers in GaAs and CdTe at densities as low as 2×1015 cm-3. The energy relaxation time of electrons via LO-phonon emission is determined to be 240±20 fs in GaAs. In more polar CdTe, this time constant is found to be as short as 70±15 fs which is even shorter than the phonon oscillation period of 200 fs.

UR - http://www.scopus.com/inward/record.url?scp=0001703736&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.60.R11265

DO - 10.1103/PhysRevB.60.R11265

M3 - Article

AN - SCOPUS:0001703736

SN - 1098-0121

VL - 60

SP - R11265-R11268

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 16

ER -

Ultrafast electron-phonon scattering in semiconductors studied by nondegenerate four-wave mixing

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