@inproceedings{e8a747a3be2d4515891e52c9beed7950,
title = "Ultra-fast domain formation in a semiconductor superlattice",
abstract = "Presents experimental evidence for ultra-fast domain formation in a semiconductor superlattice. An InGaAs/InAlAs superlattice device was mounted in a corner cube. The superlattice device showed a region of negative differential conductance in the current-voltage characteristic for voltages larger than an onset voltage. When the superlattice device was irradiated with radiation smaller than 1.2 THz, the onset voltage shifted, with increasing THz radiation power, to lower voltages. Taking an analysis based on a drift-diffusion model into account, we suggest that dipole domains form within about 400 fs.",
author = "R. Scheuerer and F. Klappenberger and Renk, {K. F.} and E. Schomburg and J. Allen and Ramian, {G. R.} and Scott, {J. S.S.} and Kovsh and V. Ustinov and A. Zhukov",
note = "Publisher Copyright: {\textcopyright} 2002 IEEE.; 27th International Conference on Infrared and Millimeter Waves, IRMMW 2002 ; Conference date: 22-09-2002 Through 26-09-2002",
year = "2002",
doi = "10.1109/ICIMW.2002.1076061",
language = "English",
series = "Conference Digest - 27th International Conference on Infrared and Millimeter Waves, IRMMW 2002",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "15--16",
editor = "Temkin, {Richard J.}",
booktitle = "Conference Digest - 27th International Conference on Infrared and Millimeter Waves, IRMMW 2002",
}