Two-level systems in hydrogenated amorphous silicon: NMR studies

J. B. Boyce, M. Stutzmann, S. E. Ready

Publikation: Beitrag in FachzeitschriftArtikelBegutachtung

6 Zitate (Scopus)

Abstract

A low-temperature deviation from the spin-lattice relaxation of bonded hydrogen by molecular hydrogen is observed in a-Si:H. Two likely causes for this deviation, namely, relaxation by paramagnetic electronic spins and by two-level systems (TLS), are both shown to be negligible. In ruling out TLS or tunneling modes, a second NMR experiment is performed that allows a low limit to be placed on the number or excursion of H atoms involved in a tunneling mode. These results indicate that the H-atom motion is not involved to any significant degree in the atomic motion associated with a TLS.

OriginalspracheEnglisch
Seiten (von - bis)6062-6065
Seitenumfang4
FachzeitschriftPhysical Review B
Jahrgang32
Ausgabenummer9
DOIs
PublikationsstatusVeröffentlicht - 1985
Extern publiziertJa

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