Tunnel junctions for ohmic intra-device contacts on GaSb-substrates

Oliver Dier, Martin Sterkel, Markus Grau, Chun Lin Chun, Christian Lauer, Markus Christian Amann

Publikation: Beitrag in FachzeitschriftArtikelBegutachtung

19 Zitate (Scopus)

Abstract

A tunnel junction intradevice contact based on GaSb substrates was analyzed. An InAsSb homojunction shows the lowest average resistivity of 2.63×10-5 ωcm2. Annealing tests showed a strong degradation of the tunnel junctions. It was found that by including more steps into the grading and improving the thermal stability of the tunnel junction, the resistivity values may be further reduced and buried tunnel junction devices become feasible.

OriginalspracheEnglisch
Seiten (von - bis)2388-2389
Seitenumfang2
FachzeitschriftApplied Physics Letters
Jahrgang85
Ausgabenummer12
DOIs
PublikationsstatusVeröffentlicht - 20 Sept. 2004

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