Transport Properties of Siloxene

M. Rosenbauer; A. Höpner; U. Dettlaff‐Weglikowska; M. Stutzmann

doi:10.1002/pssb.2221900116

Transport Properties of Siloxene

M. Rosenbauer, A. Höpner, U. Dettlaff‐Weglikowska, M. Stutzmann

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Max Planck Institute for Solid State Research

Publikation: Beitrag in Fachzeitschrift › Artikel › Begutachtung

4 Zitate (Scopus)

Abstract

The transport properties of siloxene (as‐grown and annealed) are investigated. The dark conductivity is thermally activated with an activation energy of about 1 eV for as‐prepared siloxene, in accordance with the insulating nature of this material and its energy gap of about 2.6 eV. The conductivity is very sensitive to the presence of ambient gases. The spectral and temperature dependence of photo‐ conductivity is also discussed.

Originalsprache	Englisch
Seiten (von - bis)	107-110
Seitenumfang	4
Fachzeitschrift	Physica Status Solidi (B) Basic Research
Jahrgang	190
Ausgabenummer	1
DOIs	https://doi.org/10.1002/pssb.2221900116
Publikationsstatus	Veröffentlicht - 1 Juli 1995

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title = "Transport Properties of Siloxene",

abstract = "The transport properties of siloxene (as‐grown and annealed) are investigated. The dark conductivity is thermally activated with an activation energy of about 1 eV for as‐prepared siloxene, in accordance with the insulating nature of this material and its energy gap of about 2.6 eV. The conductivity is very sensitive to the presence of ambient gases. The spectral and temperature dependence of photo‐ conductivity is also discussed.",

author = "M. Rosenbauer and A. H{\"o}pner and U. Dettlaff‐Weglikowska and M. Stutzmann",

year = "1995",

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AU - Stutzmann, M.

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AB - The transport properties of siloxene (as‐grown and annealed) are investigated. The dark conductivity is thermally activated with an activation energy of about 1 eV for as‐prepared siloxene, in accordance with the insulating nature of this material and its energy gap of about 2.6 eV. The conductivity is very sensitive to the presence of ambient gases. The spectral and temperature dependence of photo‐ conductivity is also discussed.

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DO - 10.1002/pssb.2221900116

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Transport Properties of Siloxene

Abstract

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