Transmutation doping and lattice defects in degenerate InSb

n‐type InSb single crystals were irradiated with thermal neutrons below T = 6 K. The Shubnikov‐de Haas effect and the resistivity Q(T = 4.6 K) were measured as a function of the neutron dose and the holding temperature of a subsequent annealing program. The results are discussed in terms of the transport scattering rate and the lifetime of the Landau‐levels. They have to be interpreted by means of n‐doping due to nuclear reactions and irradiation induced negatively charged defects. Almost complete annealing of the transport parameters can be achieved by heating the samples to T_A = 400 K.