Abstract
Because of its rather large ionization energies compared to Si, dopants of SiC have larger ionization time constants. Therefore, dynamically enlarged space charge regions, eventually resulting in a punch-through (PT) situation in certain device structures, can easily occur. The detailed numerical analysis presented in this paper shows that the high currents caused by PT are able to destroy SiC power devices. As a consequence, the effect of dynamic PT has to be taken into account designing SiC devices.
| Originalsprache | Englisch |
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| Seiten | 231-234 |
| Seitenumfang | 4 |
| Publikationsstatus | Veröffentlicht - 1999 |
| Veranstaltung | Proceedings of the 1999 International Conference on Simulation of Semicondutor Processes and Devices (SISPAD'99) - Kyoto, Jpn Dauer: 6 Sept. 1999 → 8 Sept. 1999 |
Konferenz
| Konferenz | Proceedings of the 1999 International Conference on Simulation of Semicondutor Processes and Devices (SISPAD'99) |
|---|---|
| Ort | Kyoto, Jpn |
| Zeitraum | 6/09/99 → 8/09/99 |