TY - JOUR
T1 - Temperature dependence of electrical characteristics of Pt/GaN Schottky diode fabricated by UHV e-beam evaporation
AU - Kumar, Ashish
AU - Arafin, Shamsul
AU - Amann, Markus Christian
AU - Singh, Rajendra
PY - 2013
Y1 - 2013
N2 - Temperature-dependent electrical characterization of Pt/n-GaN Schottky barrier diodes prepared by ultra high vacuum evaporation has been done. Analysis has been made to determine the origin of the anomalous temperature dependence of the Schottky barrier height, the ideality factor, and the Richardson constant calculated from the I-V-T characteristics. Variable-temperature Hall effect measurements have been carried out to understand charge transport at low temperature. The modified activation energy plot from the barrier inhomogeneity model has given the value of 32.2 A/(cm2 K2) for the Richardson constant A** in the temperature range 200 to 380 K which is close to the known value of 26.4A/(cm2 K2) for n-type GaN.
AB - Temperature-dependent electrical characterization of Pt/n-GaN Schottky barrier diodes prepared by ultra high vacuum evaporation has been done. Analysis has been made to determine the origin of the anomalous temperature dependence of the Schottky barrier height, the ideality factor, and the Richardson constant calculated from the I-V-T characteristics. Variable-temperature Hall effect measurements have been carried out to understand charge transport at low temperature. The modified activation energy plot from the barrier inhomogeneity model has given the value of 32.2 A/(cm2 K2) for the Richardson constant A** in the temperature range 200 to 380 K which is close to the known value of 26.4A/(cm2 K2) for n-type GaN.
KW - Hall effect
KW - Pt/GaN Schottky diode
KW - Temperature dependence
KW - UHV e-beam evaporation
UR - http://www.scopus.com/inward/record.url?scp=84891471881&partnerID=8YFLogxK
U2 - 10.1186/1556-276X-8-481
DO - 10.1186/1556-276X-8-481
M3 - Article
AN - SCOPUS:84891471881
SN - 1931-7573
VL - 8
SP - 1
EP - 7
JO - Nanoscale Research Letters
JF - Nanoscale Research Letters
IS - 1
M1 - 481
ER -