Spacing and width of Coulomb blockade peaks in a silicon quantum dot

David Abusch-Magder, F. Simmel, D. A. Wharam, M. A. Kastner, J. P. Kotthaus

Publikation: Beitrag in FachzeitschriftKonferenzartikelBegutachtung

14 Zitate (Scopus)

Abstract

We present an experimental study of the fluctuations of Coulomb blockade peak positions of a quantum dot. The dot is defined by patterning the two-dimensional electron gas of a silicon MOSFET structure using stacked gates. The ratio of charging energy to single-particle energy is considerably larger than in comparable GaAs/AlGaAs quantum dots. The statistical distribution of the conductance peak spacings in the Coulomb blockade regime was found to be unimodal and does not follow the Wigner surmise. The fluctuations of the spacings are much larger than the typical single-particle level spacing and thus clearly contradict the expectation of random matrix theory. Measurements of the natural line width of a set of several adjacent conductance peaks suggest that all of the peaks in the set are dominated by electrons being transported through a single-broad energy level.

OriginalspracheEnglisch
Seiten (von - bis)382-387
Seitenumfang6
FachzeitschriftPhysica E: Low-Dimensional Systems and Nanostructures
Jahrgang6
Ausgabenummer1
DOIs
PublikationsstatusVeröffentlicht - Feb. 2000
Extern publiziertJa
Veranstaltung13th International Conference on the Electronic Properties of Two-Dimensional Systems (EP2DS-13) - Ottawa, Ont, Can
Dauer: 1 Aug. 19996 Aug. 1999

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