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Simulation of the Transient Potential Distribution On-Chip during a Fast ESD Event Based on a Parametric Measurement Analysis

  • Lena Zeitlhoefler
  • , Friedrich Zur Nieden
  • , Kai Esmark
  • , Gemot Langguth
  • , Martin Sauter
  • , Franz Kreupl

Publikation: Beitrag in Buch/Bericht/KonferenzbandKonferenzbeitragBegutachtung

Abstract

ESD events on semiconductor devices in the pico-or nanosecond range cause local potential differences and are often responsible for severe damages of an IC. The presented simulation approach focuses on the simulation of the transient and local potential distribution on the chip during a discharge on wafer-level. In the approach, the total charge is distributed either via the top metal layer and also via the underlying substrate layer dependent on the IC design. The approach consists of a network-based simulation with uniform cells of lumped elements, which values are determined based on measurement data.

OriginalspracheEnglisch
TitelProceedings of the 2020 International Symposium on Electromagnetic Compatibility - EMC EUROPE, EMC EUROPE 2020
Herausgeber (Verlag)Institute of Electrical and Electronics Engineers Inc.
ISBN (elektronisch)9781728155791
DOIs
PublikationsstatusVeröffentlicht - 23 Sept. 2020
Veranstaltung2020 International Symposium on Electromagnetic Compatibility - EMC EUROPE, EMC EUROPE 2020 - Virtual, Rome, Italien
Dauer: 23 Sept. 202025 Sept. 2020

Publikationsreihe

NameProceedings of the 2020 International Symposium on Electromagnetic Compatibility - EMC EUROPE, EMC EUROPE 2020

Konferenz

Konferenz2020 International Symposium on Electromagnetic Compatibility - EMC EUROPE, EMC EUROPE 2020
Land/GebietItalien
OrtVirtual, Rome
Zeitraum23/09/2025/09/20

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