Silver metal organic chemical vapor deposition for advanced silver metallization

L. Gao, P. Härter, Ch Linsmeier, A. Wiltner, R. Emling, D. Schmitt-Landsiedel

Publikation: Beitrag in FachzeitschriftArtikelBegutachtung

38 Zitate (Scopus)

Abstract

The use of silver interconnects enables higher speed for silicon integrated circuits. The formation of Ag interconnects requires sequential deposition of a continuous barrier layer followed by silver deposition and chemical-mechanical polishing (CMP). In this article, various organometallic precursors (hfac)Ag(1,5-COD), (fod)Ag(PEt3) and (hfac)Ag(VTES) for the metal organic chemical vapor deposition (MOCVD) of silver on a TiN adhesion layer were evaluated and their deposition characteristics was studied. It was confirmed that Ag could be deposited at a substrate temperature as low as 180 °C with (hfac)Ag(VTES). The silver thin film was deposited at a precursor vaporization temperature of 50 °C and a substrate temperature of 220-250 °C, resulting in Ag film with resistivity around 1.8-2.0 μΩ cm.

OriginalspracheEnglisch
Seiten (von - bis)296-300
Seitenumfang5
FachzeitschriftMicroelectronic Engineering
Jahrgang82
Ausgabenummer3-4 SPEC. ISS.
DOIs
PublikationsstatusVeröffentlicht - Dez. 2005

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