Silicon High-Resistivity-Substrate Millimeter-Wave Technology

Josef Buechler; Erich Kasper; Peter Russer; Karl M. Strohm

doi:10.1109/T-ED.1986.22866

Silicon High-Resistivity-Substrate Millimeter-Wave Technology

Josef Buechler, Erich Kasper, Peter Russer, Karl M. Strohm

Technische Universität München

Publikation: Beitrag in Fachzeitschrift › Artikel › Begutachtung

19 Zitate (Scopus)

Abstract

The application of molecular beam epitaxy (MBE) and X-ray lithography for the fabrication of monolithic integrated millimeter-wave devices on high-resistivity silicon has been investigated. Process compatibility and the retention of high-resistivity characteristics were measured using the spreading resistance method and Hall measurements after various process steps. Microstrip resonators of ring and linear geometry were fabricated on 10 000 Ω.cm silicon substrates. For linear microstrip resonators, the attenuation was found to be less than 0.6 dB/cm at 90 GHz. A 95-GHz IMPATT oscillator circuit and a planar microstrip antenna array have been fabricated on highly insulating silicon substrates. For the oscillator, a combined monolithic—hybrid integration technique was used to attach the discrete IMPATT diode to the resonator circuit. The oscillator does not require tuning elements. Preliminary experimental results are 8 mW of output power with 0.2 percent efficiency at 95 GHz.

Originalsprache	Englisch
Seiten (von - bis)	2047-2052
Seitenumfang	6
Fachzeitschrift	IEEE Transactions on Electron Devices
Jahrgang	33
Ausgabenummer	12
DOIs	https://doi.org/10.1109/T-ED.1986.22866
Publikationsstatus	Veröffentlicht - Dez. 1986

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abstract = "The application of molecular beam epitaxy (MBE) and X-ray lithography for the fabrication of monolithic integrated millimeter-wave devices on high-resistivity silicon has been investigated. Process compatibility and the retention of high-resistivity characteristics were measured using the spreading resistance method and Hall measurements after various process steps. Microstrip resonators of ring and linear geometry were fabricated on 10 000 Ω.cm silicon substrates. For linear microstrip resonators, the attenuation was found to be less than 0.6 dB/cm at 90 GHz. A 95-GHz IMPATT oscillator circuit and a planar microstrip antenna array have been fabricated on highly insulating silicon substrates. For the oscillator, a combined monolithic—hybrid integration technique was used to attach the discrete IMPATT diode to the resonator circuit. The oscillator does not require tuning elements. Preliminary experimental results are 8 mW of output power with 0.2 percent efficiency at 95 GHz.",

author = "Josef Buechler and Erich Kasper and Peter Russer and Strohm, {Karl M.}",

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AU - Kasper, Erich

AU - Russer, Peter

AU - Strohm, Karl M.

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AB - The application of molecular beam epitaxy (MBE) and X-ray lithography for the fabrication of monolithic integrated millimeter-wave devices on high-resistivity silicon has been investigated. Process compatibility and the retention of high-resistivity characteristics were measured using the spreading resistance method and Hall measurements after various process steps. Microstrip resonators of ring and linear geometry were fabricated on 10 000 Ω.cm silicon substrates. For linear microstrip resonators, the attenuation was found to be less than 0.6 dB/cm at 90 GHz. A 95-GHz IMPATT oscillator circuit and a planar microstrip antenna array have been fabricated on highly insulating silicon substrates. For the oscillator, a combined monolithic—hybrid integration technique was used to attach the discrete IMPATT diode to the resonator circuit. The oscillator does not require tuning elements. Preliminary experimental results are 8 mW of output power with 0.2 percent efficiency at 95 GHz.

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Silicon High-Resistivity-Substrate Millimeter-Wave Technology

Abstract

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