Semiconductor-based carrier-envelope phase detector

Christian Jirauschek; Lingze Duan; Oliver D. Mücke; Franz X. Kaertner; Klaus D. Hof; Thorsten Tritschler; Martin Wegener

Semiconductor-based carrier-envelope phase detector

Christian Jirauschek, Lingze Duan, Oliver D. Mücke, Franz X. Kaertner, Klaus D. Hof, Thorsten Tritschler, Martin Wegener

Publikation: Beitrag in Fachzeitschrift › Konferenzartikel › Begutachtung

Abstract

We study the carrier-envelope phase sensitivity of the inversion in a two-band semiconductor and the influence of rapid dephasing of higher-lying states. The application of this effect for constructing a solid-state phase detector is investigated.

Originalsprache	Englisch
Seiten (von - bis)	1757-1759
Seitenumfang	3
Fachzeitschrift	OSA Trends in Optics and Photonics Series
Jahrgang	96 A
Publikationsstatus	Veröffentlicht - 2004
Extern publiziert	Ja
Veranstaltung	Conference on Lasers and Electro-Optics, CLEO - Washington, DC, USA/Vereinigte Staaten Dauer: 17 Mai 2004 → 19 Mai 2004

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@article{508c6fc30add4ba79c659020356925bb,

title = "Semiconductor-based carrier-envelope phase detector",

abstract = "We study the carrier-envelope phase sensitivity of the inversion in a two-band semiconductor and the influence of rapid dephasing of higher-lying states. The application of this effect for constructing a solid-state phase detector is investigated.",

author = "Christian Jirauschek and Lingze Duan and M{\"u}cke, {Oliver D.} and Kaertner, {Franz X.} and Hof, {Klaus D.} and Thorsten Tritschler and Martin Wegener",

year = "2004",

language = "English",

volume = "96 A",

pages = "1757--1759",

journal = "OSA Trends in Optics and Photonics Series",

issn = "1094-5695",

note = "Conference on Lasers and Electro-Optics, CLEO ; Conference date: 17-05-2004 Through 19-05-2004",

}

TY - JOUR

T1 - Semiconductor-based carrier-envelope phase detector

AU - Jirauschek, Christian

AU - Duan, Lingze

AU - Mücke, Oliver D.

AU - Kaertner, Franz X.

AU - Hof, Klaus D.

AU - Tritschler, Thorsten

AU - Wegener, Martin

PY - 2004

Y1 - 2004

N2 - We study the carrier-envelope phase sensitivity of the inversion in a two-band semiconductor and the influence of rapid dephasing of higher-lying states. The application of this effect for constructing a solid-state phase detector is investigated.

AB - We study the carrier-envelope phase sensitivity of the inversion in a two-band semiconductor and the influence of rapid dephasing of higher-lying states. The application of this effect for constructing a solid-state phase detector is investigated.

UR - http://www.scopus.com/inward/record.url?scp=33645242235&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:33645242235

SN - 1094-5695

VL - 96 A

SP - 1757

EP - 1759

JO - OSA Trends in Optics and Photonics Series

JF - OSA Trends in Optics and Photonics Series

T2 - Conference on Lasers and Electro-Optics, CLEO

Y2 - 17 May 2004 through 19 May 2004

ER -

Semiconductor-based carrier-envelope phase detector

Abstract

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