Segregation of zinc in ingaas/inp heterostructures during diffusion: Experiment and numerical modeling

F. Dildey, M. C. Amann, R. Treichler

Publikation: Beitrag in FachzeitschriftArtikelBegutachtung

15 Zitate (Scopus)

Abstract

Zn diffusions from spin-on films were performed into InP/InGaAs/InP heterostructures suited for fabrication of heterojunction bipolar transistors. A strong segregation occurred at the InGaAs/InP heterojunctions enriching the Zn concentration in InGaAs by about an order of magnitude. From the Zn concentration profiles the relevant diffusion and segregation parameters were determined. Using these data an accurate numerical modeling and improved process control of the Zn diffusion into InGaAs/InP multilayer heterostructures can be achieved.

OriginalspracheEnglisch
Seiten (von - bis)810-812
Seitenumfang3
FachzeitschriftJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Jahrgang29
Ausgabenummer5 R
DOIs
PublikationsstatusVeröffentlicht - Mai 1990
Extern publiziertJa

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