Room-temperature operation of 3.26 μm GaSb-based type-I lasers with quinternary AlGaInAsSb barriers

M. Grau; C. Lin; O. Dier; C. Lauer; M. C. Amann

doi:10.1063/1.2140875

Room-temperature operation of 3.26 μm GaSb-based type-I lasers with quinternary AlGaInAsSb barriers

M. Grau, C. Lin, O. Dier, C. Lauer, M. C. Amann

Lehrstuhl für Halbleitertechnologie

Publikation: Beitrag in Fachzeitschrift › Artikel › Begutachtung

145 Zitate (Scopus)

Abstract

Quinternary AlGaInAsSb is introduced as a new barrier material for GaSb-based type-I laser diodes. For wavelengths beyond 3 μm, this material improves the valence-band offset between GaInAsSb quantum wells and barriers as compared to standard GaInAsSbAlGaAsSb structures. The laser structures, which comprise three compressively strained GaInAsSb quantum wells and AlGaInAsSb barriers and waveguides, show good structural and optical quality. 3.26 μm emission has been achieved with ridge waveguide lasers working in pulsed operation up to 50 °C. With this emission wavelength, a strong absorption line of C H4 is accessible for gas absorption measurements.

Originalsprache	Englisch
Aufsatznummer	241104
Seiten (von - bis)	1-3
Seitenumfang	3
Fachzeitschrift	Applied Physics Letters
Jahrgang	87
Ausgabenummer	24
DOIs	https://doi.org/10.1063/1.2140875
Publikationsstatus	Veröffentlicht - 2005

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abstract = "Quinternary AlGaInAsSb is introduced as a new barrier material for GaSb-based type-I laser diodes. For wavelengths beyond 3 μm, this material improves the valence-band offset between GaInAsSb quantum wells and barriers as compared to standard GaInAsSbAlGaAsSb structures. The laser structures, which comprise three compressively strained GaInAsSb quantum wells and AlGaInAsSb barriers and waveguides, show good structural and optical quality. 3.26 μm emission has been achieved with ridge waveguide lasers working in pulsed operation up to 50 °C. With this emission wavelength, a strong absorption line of C H4 is accessible for gas absorption measurements.",

author = "M. Grau and C. Lin and O. Dier and C. Lauer and Amann, {M. C.}",

year = "2005",

doi = "10.1063/1.2140875",

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AU - Grau, M.

AU - Lin, C.

AU - Dier, O.

AU - Lauer, C.

AU - Amann, M. C.

PY - 2005

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AB - Quinternary AlGaInAsSb is introduced as a new barrier material for GaSb-based type-I laser diodes. For wavelengths beyond 3 μm, this material improves the valence-band offset between GaInAsSb quantum wells and barriers as compared to standard GaInAsSbAlGaAsSb structures. The laser structures, which comprise three compressively strained GaInAsSb quantum wells and AlGaInAsSb barriers and waveguides, show good structural and optical quality. 3.26 μm emission has been achieved with ridge waveguide lasers working in pulsed operation up to 50 °C. With this emission wavelength, a strong absorption line of C H4 is accessible for gas absorption measurements.

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Room-temperature operation of 3.26 μm GaSb-based type-I lasers with quinternary AlGaInAsSb barriers

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