Role of Junctionless Mode in Improving the Photosensitivity of Sub-10 nm Carbon Nanotube/Nanoribbon Field-Effect Phototransistors: Quantum Simulation, Performance Assessment, and Comparison

In this article, ultrascaled junctionless (JL) field-effect phototransistors based on carbon nanotube/nanoribbons with sub-10 nm photogate lengths were computationally assessed using a rigorous quantum simulation. This latter self-consistently solves the Poisson equation with the mode space (MS) non-equilibrium Green’s function (NEGF) formalism in the ballistic limit. The adopted photosensing principle is based on the light-induced photovoltage, which alters the elec-trostatics of the carbon-based junctionless nano-phototransistors. The investigations included the photovoltage behavior, the I-V characteristics, the potential profile, the energy-position-resolved electron density, and the photosensitivity. In addition, the subthreshold swing–photosensitivity dependence as a function of change in carbon nanotube (graphene nanoribbon) diameter (width) was thoroughly analyzed while considering the electronic proprieties and the quantum physics in carbon nanotube/nanoribbon-based channels. As a result, the junctionless paradigm substantially boosted the photosensitivity and improved the scaling capability of both carbon phototransistors. Moreover, from the point of view of comparison, it was found that the junctionless graphene nanorib-bon field-effect phototransistors exhibited higher photosensitivity and better scaling capability than the junctionless carbon nanotube field-effect phototransistors. The obtained results are promising for modern nano-optoelectronic devices, which are in dire need of high-performance ultra-miniature phototransistors.