RHEED investigations of surface diffusion on Si(001)

J. F. Nützel; P. Brichzin; G. Abstreiter

doi:10.1016/0169-4332(96)00024-4

RHEED investigations of surface diffusion on Si(001)

J. F. Nützel, P. Brichzin, G. Abstreiter

TUM Emeriti of Excellence

Walter Schottky Institut

Publikation: Beitrag in Fachzeitschrift › Artikel › Begutachtung

Abstract

We have performed RHEED measurements over a wide range of growth temperatures and rates on Si(001) substrates. The measurements of the equilibrium intensity, the oscillation amplitude and the damping constants of the oscillations show a very systematic behaviour. RHEED oscillations at a growth rate of 0.1 Å/s are found for a wide temperature region between 300 and 750 K. This temperature window shifts systematically to higher temperatures for higher growth rates.

Originalsprache	Englisch
Seiten (von - bis)	78-81
Seitenumfang	4
Fachzeitschrift	Applied Surface Science
Jahrgang	102
DOIs	https://doi.org/10.1016/0169-4332(96)00024-4
Publikationsstatus	Veröffentlicht - Aug. 1996

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10.1016/0169-4332(96)00024-4

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title = "RHEED investigations of surface diffusion on Si(001)",

abstract = "We have performed RHEED measurements over a wide range of growth temperatures and rates on Si(001) substrates. The measurements of the equilibrium intensity, the oscillation amplitude and the damping constants of the oscillations show a very systematic behaviour. RHEED oscillations at a growth rate of 0.1 {\AA}/s are found for a wide temperature region between 300 and 750 K. This temperature window shifts systematically to higher temperatures for higher growth rates.",

author = "N{\"u}tzel, {J. F.} and P. Brichzin and G. Abstreiter",

year = "1996",

month = aug,

doi = "10.1016/0169-4332(96)00024-4",

language = "English",

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pages = "78--81",

journal = "Applied Surface Science",

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publisher = "Elsevier B.V.",

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AU - Nützel, J. F.

AU - Brichzin, P.

AU - Abstreiter, G.

PY - 1996/8

Y1 - 1996/8

N2 - We have performed RHEED measurements over a wide range of growth temperatures and rates on Si(001) substrates. The measurements of the equilibrium intensity, the oscillation amplitude and the damping constants of the oscillations show a very systematic behaviour. RHEED oscillations at a growth rate of 0.1 Å/s are found for a wide temperature region between 300 and 750 K. This temperature window shifts systematically to higher temperatures for higher growth rates.

AB - We have performed RHEED measurements over a wide range of growth temperatures and rates on Si(001) substrates. The measurements of the equilibrium intensity, the oscillation amplitude and the damping constants of the oscillations show a very systematic behaviour. RHEED oscillations at a growth rate of 0.1 Å/s are found for a wide temperature region between 300 and 750 K. This temperature window shifts systematically to higher temperatures for higher growth rates.

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U2 - 10.1016/0169-4332(96)00024-4

DO - 10.1016/0169-4332(96)00024-4

M3 - Article

AN - SCOPUS:0030564804

SN - 0169-4332

VL - 102

SP - 78

EP - 81

JO - Applied Surface Science

JF - Applied Surface Science

ER -

RHEED investigations of surface diffusion on Si(001)

Abstract

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