TY - GEN
T1 - Resistive Switching in Single Core-Shell Nanoparticles
AU - Speckbacher, M.
AU - Ji, X.
AU - Tornow, M.
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2019/7
Y1 - 2019/7
N2 - Resistive switching in single spherical core-shell Ag/SiOx-nanoparticles (CSNP) of diameter 150 nm is reported. These nanoparticles were contacted by interdigitated electrodes (IDE) and exhibit either bipolar memristive or threshold switching with OFF/ON resistance ratios in excess of three orders of magnitude. A switching mechanism based on silver ion migration in the silica shell is proposed, which leads to reversible conductive filament formation and rupture. Application of CSNP as functional building blocks in future self-assembled 3D memory architectures or neuromorphic networks is proposed.
AB - Resistive switching in single spherical core-shell Ag/SiOx-nanoparticles (CSNP) of diameter 150 nm is reported. These nanoparticles were contacted by interdigitated electrodes (IDE) and exhibit either bipolar memristive or threshold switching with OFF/ON resistance ratios in excess of three orders of magnitude. A switching mechanism based on silver ion migration in the silica shell is proposed, which leads to reversible conductive filament formation and rupture. Application of CSNP as functional building blocks in future self-assembled 3D memory architectures or neuromorphic networks is proposed.
KW - Core-shell nanoparticle
KW - Interdigitated electrode
KW - Resistive random access memory (RRAM)
KW - Resistive switching
UR - http://www.scopus.com/inward/record.url?scp=85081062490&partnerID=8YFLogxK
U2 - 10.1109/NANO46743.2019.8993937
DO - 10.1109/NANO46743.2019.8993937
M3 - Conference contribution
AN - SCOPUS:85081062490
T3 - Proceedings of the IEEE Conference on Nanotechnology
SP - 512
EP - 516
BT - 19th IEEE International Conference on Nanotechnology, NANO 2019
PB - IEEE Computer Society
T2 - 19th IEEE International Conference on Nanotechnology, NANO 2019
Y2 - 22 July 2019 through 26 July 2019
ER -