Refined analytical model of combined thermionic emission and drift-diffusion current flow through schottky structure

J. Racko, D. Donoval, G. Wachutka

Publikation: Beitrag in Buch/Bericht/KonferenzbandKonferenzbeitragBegutachtung

2 Zitate (Scopus)

Abstract

A refined approach leading to an enhanced analytical model of current transport through a Schottky structure at high forward bias voltage is presented The derived analytical equations represent a reasonable compromise between the physical rigorosity and practical applicability of two real metal-semiconductor interfaces including the quasi-neutral layer in one compact model.

OriginalspracheEnglisch
TitelESSDERC 1996 - Proceedings of the 26th European Solid State Device Research Conference
Redakteure/-innenMassimo Rudan, Giorgio Baccarani
Herausgeber (Verlag)IEEE Computer Society
Seiten275-278
Seitenumfang4
ISBN (elektronisch)286332196X
ISBN (Print)9782863321966
PublikationsstatusVeröffentlicht - 1996
Veranstaltung26th European Solid State Device Research Conference, ESSDERC 1996 - Bologna, Italien
Dauer: 9 Sept. 199611 Sept. 1996

Publikationsreihe

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Konferenz

Konferenz26th European Solid State Device Research Conference, ESSDERC 1996
Land/GebietItalien
OrtBologna
Zeitraum9/09/9611/09/96

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