Raman spectroscopy of In(Ga)As/GaAs quantum dots

L. Chu; A. Zrenner; M. Bichler; G. Böhm; G. Abstreiter

doi:10.1063/1.1333398

Raman spectroscopy of In(Ga)As/GaAs quantum dots

L. Chu, A. Zrenner, M. Bichler, G. Böhm, G. Abstreiter

Natural Sciences

Walter Schottky Institut

Publikation: Beitrag in Fachzeitschrift › Artikel › Begutachtung

26 Zitate (Scopus)

Abstract

We report on inelastic light scattering on self-assembled In(Ga)As/GaAs quantum dots. Phonon modes are investigated in backscattering from (001) surface and (110) cleaved edge both in polarized and depolarized geometry. One relatively broad phonon signal is observed which is attributed to optical phonon modes in and around the In(Ga)As quantum dots. The Raman selection rules are similar to the bulk material. Additionally, a broad peak is observed around 50 meV under resonance conditions which is attributed to electronic interlevel transitions in the n-doped In(Ga)As quantum dots.

Originalsprache	Englisch
Seiten (von - bis)	3944-3946
Seitenumfang	3
Fachzeitschrift	Applied Physics Letters
Jahrgang	77
Ausgabenummer	24
DOIs	https://doi.org/10.1063/1.1333398
Publikationsstatus	Veröffentlicht - 11 Dez. 2000

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title = "Raman spectroscopy of In(Ga)As/GaAs quantum dots",

abstract = "We report on inelastic light scattering on self-assembled In(Ga)As/GaAs quantum dots. Phonon modes are investigated in backscattering from (001) surface and (110) cleaved edge both in polarized and depolarized geometry. One relatively broad phonon signal is observed which is attributed to optical phonon modes in and around the In(Ga)As quantum dots. The Raman selection rules are similar to the bulk material. Additionally, a broad peak is observed around 50 meV under resonance conditions which is attributed to electronic interlevel transitions in the n-doped In(Ga)As quantum dots.",

author = "L. Chu and A. Zrenner and M. Bichler and G. B{\"o}hm and G. Abstreiter",

year = "2000",

month = dec,

day = "11",

doi = "10.1063/1.1333398",

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T1 - Raman spectroscopy of In(Ga)As/GaAs quantum dots

AU - Chu, L.

AU - Zrenner, A.

AU - Bichler, M.

AU - Böhm, G.

AU - Abstreiter, G.

PY - 2000/12/11

Y1 - 2000/12/11

N2 - We report on inelastic light scattering on self-assembled In(Ga)As/GaAs quantum dots. Phonon modes are investigated in backscattering from (001) surface and (110) cleaved edge both in polarized and depolarized geometry. One relatively broad phonon signal is observed which is attributed to optical phonon modes in and around the In(Ga)As quantum dots. The Raman selection rules are similar to the bulk material. Additionally, a broad peak is observed around 50 meV under resonance conditions which is attributed to electronic interlevel transitions in the n-doped In(Ga)As quantum dots.

AB - We report on inelastic light scattering on self-assembled In(Ga)As/GaAs quantum dots. Phonon modes are investigated in backscattering from (001) surface and (110) cleaved edge both in polarized and depolarized geometry. One relatively broad phonon signal is observed which is attributed to optical phonon modes in and around the In(Ga)As quantum dots. The Raman selection rules are similar to the bulk material. Additionally, a broad peak is observed around 50 meV under resonance conditions which is attributed to electronic interlevel transitions in the n-doped In(Ga)As quantum dots.

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DO - 10.1063/1.1333398

M3 - Article

AN - SCOPUS:0012861978

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VL - 77

SP - 3944

EP - 3946

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

ER -

Raman spectroscopy of In(Ga)As/GaAs quantum dots

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