Pulsed-laser crystallized highly conductive boron-doped microcrystalline silicon

C. E. Nebel; B. Dahlheimer; U. Karrer; M. Stutzmann

doi:10.1557/proc-467-331

Pulsed-laser crystallized highly conductive boron-doped microcrystalline silicon

C. E. Nebel, B. Dahlheimer, U. Karrer, M. Stutzmann

TUM Emeriti of Excellence

Technische Universität München

Publikation: Beitrag in Fachzeitschrift › Konferenzartikel › Begutachtung

1 Zitat (Scopus)

Abstract

The preparation of seed lattices, using three interfering beams (TIB) from a pulsed Nd:YAG laser in a-Si layers of 100 to 400 nm thickness is introduced and applied for seeded laser or thermally induced crystallization of a-Si on Corning 7059 glass. The structural and electronic properties of the μc-Si layers are investigated by X-ray, electron- and atomic force microscopy, Hall and conductivity measurements. In highly boron-doped μc-Si, grains up to 1.3 μm in diameter are detected, giving rise to conductivities of ≈ 2000 S/cm and hole mobilities of ≈ 10 cm²/Vs.CV Semiconducting silicon

Originalsprache	Englisch
Seiten (von - bis)	331-336
Seitenumfang	6
Fachzeitschrift	Materials Research Society Symposium - Proceedings
Jahrgang	467
DOIs	https://doi.org/10.1557/proc-467-331
Publikationsstatus	Veröffentlicht - 1997
Veranstaltung	Proceedings of the 1997 MRS Spring Symposium - San Francisco, CA, USA Dauer: 31 März 1997 → 4 Apr. 1997

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@article{962175731ad04f21962a05535c8697ac,

title = "Pulsed-laser crystallized highly conductive boron-doped microcrystalline silicon",

abstract = "The preparation of seed lattices, using three interfering beams (TIB) from a pulsed Nd:YAG laser in a-Si layers of 100 to 400 nm thickness is introduced and applied for seeded laser or thermally induced crystallization of a-Si on Corning 7059 glass. The structural and electronic properties of the μc-Si layers are investigated by X-ray, electron- and atomic force microscopy, Hall and conductivity measurements. In highly boron-doped μc-Si, grains up to 1.3 μm in diameter are detected, giving rise to conductivities of ≈ 2000 S/cm and hole mobilities of ≈ 10 cm2/Vs.CV Semiconducting silicon",

author = "Nebel, {C. E.} and B. Dahlheimer and U. Karrer and M. Stutzmann",

year = "1997",

doi = "10.1557/proc-467-331",

language = "English",

volume = "467",

pages = "331--336",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1997 MRS Spring Symposium ; Conference date: 31-03-1997 Through 04-04-1997",

}

TY - JOUR

T1 - Pulsed-laser crystallized highly conductive boron-doped microcrystalline silicon

AU - Nebel, C. E.

AU - Dahlheimer, B.

AU - Karrer, U.

AU - Stutzmann, M.

PY - 1997

Y1 - 1997

N2 - The preparation of seed lattices, using three interfering beams (TIB) from a pulsed Nd:YAG laser in a-Si layers of 100 to 400 nm thickness is introduced and applied for seeded laser or thermally induced crystallization of a-Si on Corning 7059 glass. The structural and electronic properties of the μc-Si layers are investigated by X-ray, electron- and atomic force microscopy, Hall and conductivity measurements. In highly boron-doped μc-Si, grains up to 1.3 μm in diameter are detected, giving rise to conductivities of ≈ 2000 S/cm and hole mobilities of ≈ 10 cm2/Vs.CV Semiconducting silicon

AB - The preparation of seed lattices, using three interfering beams (TIB) from a pulsed Nd:YAG laser in a-Si layers of 100 to 400 nm thickness is introduced and applied for seeded laser or thermally induced crystallization of a-Si on Corning 7059 glass. The structural and electronic properties of the μc-Si layers are investigated by X-ray, electron- and atomic force microscopy, Hall and conductivity measurements. In highly boron-doped μc-Si, grains up to 1.3 μm in diameter are detected, giving rise to conductivities of ≈ 2000 S/cm and hole mobilities of ≈ 10 cm2/Vs.CV Semiconducting silicon

UR - http://www.scopus.com/inward/record.url?scp=0031351333&partnerID=8YFLogxK

U2 - 10.1557/proc-467-331

DO - 10.1557/proc-467-331

M3 - Conference article

AN - SCOPUS:0031351333

SN - 0272-9172

VL - 467

SP - 331

EP - 336

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1997 MRS Spring Symposium

Y2 - 31 March 1997 through 4 April 1997

ER -

Pulsed-laser crystallized highly conductive boron-doped microcrystalline silicon

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