Polarization and band offsets of stacking faults in AlN and GaN

J. A. Majewski, P. Vogl

Publikation: Beitrag in FachzeitschriftArtikelBegutachtung

6 Zitate (Scopus)

Abstract

We have performed systematic first-principles pseudopotential local density functional calculations of stacking faults in GaN and AlN. Their band offsets and the charge accumulation at stacking fault interfaces has been investigated, taking fully into account the effects of lattice relaxation and electric polarization. We find the stacking fault junctions to be of type I in both materials. However, the intrinsic valence band offsets are close to zero, so that the conduction band offsets result mostly from the differences in the energy gaps between the cubic and wurtzite phases. The charge accumulated at the interface between the cubic and wurtzite phase is found to be 0.009 and 0.003 C/m2 for the AlN and GaN stacking fault, respectively.

OriginalspracheEnglisch
FachzeitschriftMRS Internet Journal of Nitride Semiconductor Research
Jahrgang3
DOIs
PublikationsstatusVeröffentlicht - 1998
Extern publiziertJa

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