PHOTOELECTROCHEMICAL PROPERTIES OF AMORPHOUS SURFACE FILMS.

One of the main differences between amorphous and crystalline semiconductors is that the lack of a long range order in the amorphous material leads to the presence of localized states at energies where the crystalline material has its band gap. Typical photoelectro-chemical behavior, such as photocurrent vs. photon energy curves and photocurrent vs. electrode potential curves, are expected to be different for crystalline and amorphous semiconductors. In order to study the influence of localized states on the photocurrent behavior, model calculations were performed.