Photoconductivity study of Li doped homoepitaxially grown CVD diamond

R. Zeisel, C. E. Nebel, M. Stutzmann, H. Sternschulte, M. Schreck, B. Stritzker

Publikation: Beitrag in FachzeitschriftArtikelBegutachtung

20 Zitate (Scopus)

Abstract

Spectrally resolved photoconductivity (PC) experiments on homoepitaxially grown, Li doped chemical vapour deposited diamond layers are presented. Our measurements reveal two new photoconductive levels with absorption thresholds at photon energies of 0.9 eV and 1.5 eV. Due to metastable occupation, the spectral dependence of the photoconductivity exhibits a pronounced peak. Via photoconductivity excitation experiments it could be shown that both new levels can be filled by photoionisation of the N donor. No correlation between Li content and spectral weight of photoexcitation at 1.7 eV could be observed.

OriginalspracheEnglisch
Seiten (von - bis)45-50
Seitenumfang6
FachzeitschriftPhysica Status Solidi (A) Applied Research
Jahrgang181
Ausgabenummer1
DOIs
PublikationsstatusVeröffentlicht - Sept. 2000

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